8205AS6中文資料ETC數(shù)據(jù)手冊PDF規(guī)格書

Description Pinout

Common drain N-channel enhancement mode power field effect transistor 8205A/8205B/8205C

It features fast switching, ultra-low on-resistance and high cost performance.

8205A/8205B/8205C are suitable for designing circuits for battery protection or low-voltage switching.

2. Features

Low on-resistance

Low drive current

Low gate voltage 2.5V

DSB=20V

IDB =6A @ V B

GSB =4.5V B

8205A:

RDS(ON) B

<32m B

Ω@VGSB

=4.5V B

8205B:

RB

DS(ON)<35m B

Ω@VB

GSB

=4.5V

8205C:

RBDS(ON)<38m B

Ω@VB

GS =4.5V

3. Application areas

Lithium battery charging protection

Power management

Portable devices

load switch