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CEB83A3

N-ChannelEnhancementModeFieldEffectTransistor

N-ChannelEnhancementModeFieldEffectTransistor FEATURES 30V,100A,RDS(ON)=5.3m?@VGS=10V. RDS(ON)=8.0m?@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB83A3

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,100A,RDS(ON)=5.3mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RDS(ON)=8.0mW@VGS=4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB83A3G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,102A,RDS(ON)=4.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RDS(ON)=6.2mW@VGS=4.5V. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED83A3

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,80A,RDS(ON)=6mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=9mW@VGS=4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED83A3

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,80A,RDS(ON)=6m?@VGS=10V. RDS(ON)=9m?@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED83A3G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,93A,RDS(ON)=4.8mΩ@VGS=10V. RDS(ON)=7.4mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP83A3

N-ChannelEnhancementModeFieldEffectTransistor

N-ChannelEnhancementModeFieldEffectTransistor FEATURES 30V,100A,RDS(ON)=5.3m?@VGS=10V. RDS(ON)=8.0m?@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP83A3

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,100A,RDS(ON)=5.3mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RDS(ON)=8.0mW@VGS=4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP83A3G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,102A,RDS(ON)=4.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RDS(ON)=6.2mW@VGS=4.5V. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP83A3G

N-ChannelEnhancementModeFieldEffectTransistor

N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■30V,102A,RDS(ON)=4.5mΩ@VGS=10V. RDS(ON)=7.0mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■

CETChino-Excel Technology

華瑞華瑞股份有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
CET/華瑞
23+
TO-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
CET
23+
TO-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
CET
22+
TO-220
25000
原裝現(xiàn)貨,價(jià)格優(yōu)惠,假一罰十
 詢價(jià)
CET
16+
TO-220
500
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價(jià)
CET
TO-220
50000
一級(jí)代理 原裝正品假一罰十價(jià)格優(yōu)勢(shì)長期供貨
 詢價(jià)
CET/華瑞
23+
NA/
300
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開增值稅票
 詢價(jià)
CET/華瑞
2023+
8700
原裝現(xiàn)貨
 詢價(jià)
CET
23+
原裝正品現(xiàn)貨
10000
TO-220
 詢價(jià)
TI
16+
QFP
578
進(jìn)口原裝現(xiàn)貨/價(jià)格優(yōu)勢(shì)!
 詢價(jià)
TI
24+
QFP
6500
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證
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更多83A3G供應(yīng)商 更新時(shí)間2025-2-4 11:00:00

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