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FDD8880

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=58A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=9mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FDD8880

30VN-ChannelMOSFET

Features Highperformancetrenchtechnologyforextremelylow RDS(ON) Lowgatecharge Highpowerandcurrenthandlingcapability VDS=30V RDS(ON)(atVGS=10V)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺半導(dǎo)體廣東友臺半導(dǎo)體有限公司

FDD8880

N-channelEnhancementModePowerMOSFET

Features ?VDS=30V,ID=80A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

FDMS8880

N-ChannelPowerTrench?MOSFET30V,21A,8.5m廓

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDP8880

N-ChannelPowerTrenchMOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizedforlowgatecharge,lowrDS(ON)andfastswitchingspeed. Features ■rDS(ON)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDP8880

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FDS8880

20V,6ASynchronousStep-Down

GENERALDESCRIPTION TheADP2381isacurrentmodecontrol,synchronous,stepdown,dc-to-dcregulator.Itintegratesa44m?powerMOSFETandalow-sidedrivertoprovideahighefficiencysolution.TheADP2381runsfromaninputvoltageof4.5Vto20Vandcandeliver6Aofoutputcurrent.T

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

FDS8880

Dual5A,20VSynchronousStep-Down

GENERALDESCRIPTION TheADP2325isafullfeatured,dualoutput,step-downdc-to-dcregulatorbasedonacurrentmodearchitecture.TheADP2325integratestwohigh-sidepowerMOSFETsandtwolow-sidedriversfortheexternalN-channelMOSFETs.Thetwopulse-widthmodulation(PWM)channelscanbe

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

FDS8880

N-ChannelPowerTrenchMOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizedforlowgatecharge,lowrDS(on)andfastswitchingspeed. Features rDS

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDS8880

N-ChannelPowerTrench?MOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

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80
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29954
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37279
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41336
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FCI-BERG
201
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INTERSIL
23+
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5000
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23+
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880000
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20+
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396
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2022+
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38550
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58000
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