89C1632RPQE-25中文資料Maxwell數(shù)據(jù)手冊PDF規(guī)格書

DESCRIPTION:

Maxwell Technologies’ 89C1632 high-performance 16 Mega bit Multi-Chip Module (MCM) Static Random Access Memory features a greater than 100 krad (Si) total dose tolerance, depending upon space mission. The four 4-Megabyte SRAM die and bypass capacitors are incorporated into a high-reliable hermetic quad flat-pack ceramic package.

FEATURES:

? Four 512k x 8 SRAM architecture

? RAD-PAK? technology hardens against natural space radiation technology

? Total dose hardness:

- > 100 krad (Si), depending upon space mission

? Excellent Single Event Effects:

- SEL > 68 MeV/mg/cm2

- SEU threshold = 3 MeV/mg/cm2

- SEU saturated cross section: 6E-9 cm2/bit

? Package: 68-pin quad flat package

? Fast access time: 20, 25 and 30 ns

? Completely static memory - no clock or timing strobe required

? Internal bypass capacitor

? High-speed silicon-gate CMOS technology

? 5V or 3V ± 10 power supply

? Equal address and chip enable access times

? Three-state outputs

? All inputs and outputs are TTL compatible