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8KS2564GAHB04中文資料英飛凌數(shù)據(jù)手冊PDF規(guī)格書
8KS2564GAHB04規(guī)格書詳情
Features
? Interface
- HYPERBUS? extended-IO
- 1.7 to 2.0 V (1.8 typ.) interface support
? Single-ended clock (CK) - 20 bus signals
? Optional differential clock (CK, CK#) - 21 bus signals
- Chip Select (CS#)
- 16-bit data bus (DQ[15:0])
- Hardware reset (RESET#)
- Bidirectional read-write data strobe (RWDS [1:0])
? Output at the start of all transactions to indicate refresh latency
? Output during read transactions as read data strobe
? Input during write transactions as write data mask
? Performance, power, and packages
- 200 MHz maximum clock rate
- DDR - transfers data on both edges of the clock
- Data throughput up to 800 MBps (6,400 Mbps)
- Configurable burst characteristics
? Linear burst
? Wrapped burst lengths:
16 words (8 clocks)
32 words (16 clocks)
64 words (32 clocks)
128 words (64 clocks)
? Hybrid option - one wrapped burst followed by linear burst
- Configurable output drive strength
- Power modes
? Hybrid Sleep mode
? Deep Power Down
- Memory array refresh
? Partial array (1/8, 1/4, 1/2, and so on)
? Full array
- Package
? 49-ball FBGA
- Operating temperature range
? Automotive, AEC-Q100 Grade 3: –40°C to +85°C
? Automotive, AEC-Q100 Grade 2: –40°C to +105°C
? Technology
- 25 nm DRAM
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250 |
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14 |
14 |
詢價(jià) | ||||
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23+ |
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3314 |
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10750 |
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290 |
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詢價(jià) | ||
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新 |
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詢價(jià) | |||
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24+ |
con |
10000 |
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詢價(jià) |