93C46BT-E/ST集成電路（IC）的存儲器規(guī)格書PDF中文資料

93C46BT-E/ST屬于集成電路（IC）的存儲器。由微芯科技股份有限公司制造生產(chǎn)的93C46BT-E/ST存儲器存儲器是集成電路上用作數(shù)據(jù)存儲設備的半導體器件。這些器件分為非易失性或易失性兩種，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。

Description:

The Microchip Technology Inc. 93XX46A/B/C devices are 1Kbit low-voltage serial Electrically Erasable PROMs (EEPROM). Word-selectable devices such as the 93AA46C, 93LC46C or 93C46C are dependent upon external logic levels driving the ORG pin to set word size. For dedicated 8-bit communication, the 93AA46A, 93LC46A or 93C46A devices are available, while the 93AA46B, 93LC46B and 93C46B devices provide dedicated 16-bit communication. Advanced CMOS technology makes these devices ideal for low power, nonvolatile memory applications. The entire 93XX Series is available in standard packages includ ing 8-lead PDIP and SOIC, and advanced packaging including 8-lead MSOP, 6-lead SOT-23, 8-lead 2x3 DFN/TDFN and 8-lead TSSOP. All packages are Pb-free (Matte Tin) finish.

Features:

? Low-Power CMOS Technology

? ORG Pin to Select Word Size for ‘46C’ Version

? 128 x 8-bit Organization ‘A’ Devices (no ORG)

? 64 x 16-bit Organization ‘B’ Devices (no ORG)

? Self-Timed Erase/Write Cycles (including Auto-Erase)

? Automatic Erase All (ERAL) Before Write All (WRAL)

? Power-On/Off Data Protection Circuitry

? Industry Standard 3-Wire Serial I/O

? Device Status Signal (Ready/Busy)

? Sequential Read Function

? 1,000,000 Erase/Write Cycles

? Data Retention > 200 Years

? RoHS Compliant

? Temperature Ranges Supported:

- Industrial (I) -40°C to +85°C

- Automotive (E) -40°C to +125°C