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98AON00714H中文資料安森美半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書

98AON00714H
廠商型號(hào)

98AON00714H

功能描述

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 25 A, 1700 V, D1, TO-247-2L

文件大小

357.68 Kbytes

頁(yè)面數(shù)量

6 頁(yè)

生產(chǎn)廠商 ON Semiconductor
企業(yè)簡(jiǎn)稱

ONSEMI安森美半導(dǎo)體

中文名稱

安森美半導(dǎo)體公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-23 8:46:00

98AON00714H規(guī)格書詳情

Description

Silicon Carbide (SiC) Schottky Diodes use a completely new

technology that provides superior switching performance and higher

reliability compared to Silicon. No reverse recovery current,

temperature independent switching characteristics, and excellent

thermal performance sets Silicon Carbide as the next generation of

power semiconductor. System benefits include highest efficiency,

faster operating frequency, increased power density, reduced EMI, and

reduced system size and cost.

Features

? Max Junction Temperature 175?C

? Avalanche Rated 506 mJ

? High Surge Current Capacity

? Positive Temperature Coefficient

? Ease of Paralleling

? No Reverse Recovery / No Forward Recovery

? These Devices are Halogen Free/BFR Free and are RoHS Compliant

Applications

? SMPS, Solar Inverter, UPS

? Power Switching Circuits

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