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98AON07824H中文資料安森美半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書

98AON07824H
廠商型號(hào)

98AON07824H

功能描述

Dual Boost Power Module

文件大小

1.5026 Mbytes

頁面數(shù)量

16

生產(chǎn)廠商 ON Semiconductor
企業(yè)簡(jiǎn)稱

ONSEMI安森美半導(dǎo)體

中文名稱

安森美半導(dǎo)體公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-9 17:53:00

98AON07824H規(guī)格書詳情

The NXH100B120H3Q0 is a power module containing a dual boost

stage. The integrated field stop trench IGBTs and SiC Diodes provide

lower conduction losses and switching losses, enabling designers to

achieve high efficiency and superior reliability.

Features

? 1200 V Ultra Field Stop IGBTs

? Low Reverse Recovery and Fast Switching SiC Diodes

? 1600 V Bypass and Anti?parallel Diodes

? Low Inductive Layout

? Solderable Pins or Press?Fit Pins

? Thermistor

? Options with Pre?Applied Thermal Interface Material (TIM) and

Without Pre?Applied TIM

Typical Applications

? Solar Inverter

? Uninterruptible Power Supplies

? Energy Storage Systems

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