98AON13446G中文資料安森美半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

Description

The FOD3182 is a 3 A Output Current, High Speed MOSFET Gate

Drive Optocoupler. It consists of a aluminium gallium arsenide

(AlGaAs) light emitting diode optically coupled to a CMOS detector

with PMOS and NMOS output power transistors integrated circuit

power stage. It is ideally suited for high frequency driving of power

MOSFETS used in Plasma Display Panels (PDPs), motor control

inverter applications and high performance DC/DC converters.

The device is packaged in an 8?pin dual in?line housing compatible

with 260°C reflow processes for lead free solder compliance.

Features

? High Noise Immunity Characterized by 50 kV/s (Typ.) Common

Mode Rejection @ VCM = 2,000 V

? Guaranteed Operating Temperature Range of ?40°C to +100°C

? 3 A Peak Output Current

? Fast Switching Speed

? 210 ns Max. Propagation Delay

? 65 ns Max. Pulse Width Distortion

? Fast Output Rise/Fall Time

? Offers Lower Dynamic Power Dissipation

? 250 kHz Maximum Switching Speed

? Wide VDD Operating Range: 10 V to 30 V

? Use of P?Channel MOSFETs at Output Stage Enables Output

Voltage Swing Close to the Supply Rail (Rail?to?Rail Output)

? 5000 Vrms, 1 Minute Isolation

? Under Voltage Lockout Protection (UVLO) with Hysteresis –

Optimized for Driving MOSFETs

? Minimum Creepage Distance of 8.0 mm

? Minimum Clearance Distance of 10 mm to 16 mm (Option TV or

TSV)

? Minimum Insulation Thickness of 0.5 mm

? UL and VDE*

? 1,414 Peak Working Insulation Voltage (VIORM)

*Requires “V” Ordering Option

Applications

? Plasma Display Panel

? High Performance DC/DC Convertor

? High Performance Switch Mode Power Supply

? High Performance Uninterruptible Power Supply

? Isolated Power MOSFET Gate Drive