98AON13659G中文資料安森美半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

General Description

This device includes two specialized N?Channel MOSFETs in a

dual PQFN package. The switch node has been internally connected to

enable easy placement and routing of synchronous buck converters.

The control MOSFET (Q1) and synchronous SyncFET? (Q2) have

been designed to provide optimal power efficiency.

Features

Q1: N?Channel

? Max rDS(on) = 8 m at VGS = 10 V, ID = 13 A

? Max rDS(on) = 11 m at VGS = 4.5 V, ID = 11 A

Q2: N?Channel

? Max rDS(on) = 2.6 m at VGS = 10 V, ID = 23 A

? Max rDS(on) = 3.5 m at VGS = 4.5 V, ID = 21 A

? Low Inductance Packaging Shortens Rise/Fall Times, Resulting in

Lower Switching Losses

? MOSFET Integration Enables Optimum Layout for Lower Circuit

Inductance and Reduced Switch Node Ringing

? This Device is Pb?Free and is RoHS Compliant

Applications

? Computing

? Communications

? General Purpose Point of Load

? Notebook VCORE