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98AON13773G中文資料安森美半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

98AON13773G
廠商型號

98AON13773G

功能描述

IGBT - Field Stop, Trench, Soft Fast Recovery Diode 650 V, 160 A

文件大小

3.43739 Mbytes

頁面數(shù)量

10

生產(chǎn)廠商 ON Semiconductor
企業(yè)簡稱

ONSEMI安森美半導(dǎo)體

中文名稱

安森美半導(dǎo)體公司官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-1-26 23:00:00

98AON13773G規(guī)格書詳情

Benefits

? Very Low Conduction and Switching Losses for a High Efficiency

Operation in Various Applications

? Rugged Transient Reliability

? Outstanding Parallel Operation Performance with Balance Current Sharing

? Low EMI

Features

? AEC?Q101 Qualified and PPAP Capable

? Very Low Saturation Voltage: VCE(sat) = 1.6 V (Typ.) @ IC = 160 A

? Maximum Junction Temperature: TJ = 175°C

? Positive Temperature Co?Efficient

? Tight Parameter Distribution

? High Input Impedance

? 100% of the Parts are Dynamically Tested

? Short circuit ruggedness > 6 s @ 25°C

? Copacked with Soft, Fast Recovery Extremefast Diode

? This Device is Pb?Free, Halogen Free/BFR Free and are RoHS Compliant

Applications

? Traction Inverter for HEV/EV

? Auxiliary DC/AC Converter

? Motor Drives

? Other Power?Train Applications Requiring High Power Switch

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