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98AON13773G中文資料安森美半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

98AON13773G
廠商型號(hào)

98AON13773G

功能描述

Field Stop Trench IGBT With Soft Fast Recovery Diode 650 V, 120 A

文件大小

481.25 Kbytes

頁(yè)面數(shù)量

11 頁(yè)

生產(chǎn)廠商 ON Semiconductor
企業(yè)簡(jiǎn)稱

ONSEMI安森美半導(dǎo)體

中文名稱

安森美半導(dǎo)體公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-2-4 14:26:00

98AON13773G規(guī)格書(shū)詳情

Features

? Very Low Saturation Voltage : VCE(sat) = 1.5 V(Typ.) @ IC = 120 A

? Maximum Junction Temperature : TJ = 175°C

? Positive Temperature Co?efficient

? Tight Parameter Distribution

? High Input Impedance

? 100% of the Parts are Dynamically Tested

? Short Circuit Ruggedness > 6 s @ 25°C

? Copacked with Soft, Fast Recovery Extremefast Diode

? AEC?Q101 Qualified and PPAP Capable

? This is a Pb?Free Device

Benefits

? Very Low Conduction and Switching Losses for a High Efficiency

Operation in Various Applications

? Rugged Transient Reliability

? Outstanding Parallel Operation Performance with Balance Current

Sharing

? Low EMI

Applications

? Traction Inverter for HEV/EV

? Auxiliary DC/AC Converter

? Motor Drives

? Other Power?train Applications Requiring High Power Switch

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