98AON13851G中文資料安森美半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

Description

Using Novel Field Stop Trench IGBT Technology,

ON Semiconductor’s new series of Field Stop Trench IGBTs offer

the optimum performance for Automotive chargers, Solar Inverter,

UPS and Digital Power Generator where low conduction and

switching losses are essential.

Features

? Maximum Junction Temperature : TJ = 175°C

? Positive Temperature Co?efficient for Easy Parallel Operating

? High Current Capability

? Low Saturation Voltage: VCE(sat) = 1.65 V (Typ.) @ IC = 75 A

? High Input Impedance

? Tightened Parameter Distribution

? AEC?Q101Qualified and PPAP Capable

? This Device is Pb?Free and is RoHS Compliant

Applications

? Automotive Chargers, Converters, High Voltage Auxiliaries

? Solar Inverters, UPS, Digital Power Generator