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98AON13851G中文資料安森美半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書

98AON13851G
廠商型號(hào)

98AON13851G

功能描述

MOSFET – N-Channel, SUPREMOS 600 V, 25 A, 126 m

文件大小

406.07 Kbytes

頁(yè)面數(shù)量

9 頁(yè)

生產(chǎn)廠商 ON Semiconductor
企業(yè)簡(jiǎn)稱

ONSEMI安森美半導(dǎo)體

中文名稱

安森美半導(dǎo)體公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-26 23:00:00

98AON13851G規(guī)格書詳情

Description

The SUPREMOS? MOSFET is ON Semiconductor’s next

generation of high voltage super?junction (SJ) technology employing

a deep trench filling process that differentiates it from the

conventional SJ MOSFETs. This advanced technology and precise

process control provides lowest Rsp on?resistance, superior switching

performance and ruggedness. SUPREMOS MOSFET is suitable for

high frequency switching power converter applications such as PFC,

server/telecom power, FPD TV power, ATX power, and industrial

power applications.

Features

? RDS(on) = 108 m (Typ.) @ VGS = 10 V, ID = 12.5 A

? Ultra Low Gate Charge (Typ. Qg = 57 nC)

? Low Effective Output Capacitance (Typ. Coss(eff.) = 262 pF)

? 100% Avalanche Tested

? This Device is Pb?Free and is RoHS Compliant

Applications

? Solar Inverter

? AC?DC Power Supply

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