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98AON13852G

Silicon Carbide (SiC) MOSFET – EliteSiC, 80mohm, 1200V, M1, TO-247-4L

Description SiliconCarbide(SiC)MOSFETusesacompletelynewtechnology thatprovidesuperiorswitchingperformanceandhigherreliability comparedtoSilicon.Inaddition,thelowONresistanceandcompact chipsizeensurelowcapacitanceandgatecharge.Consequently, systembenefitsincl

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

98AON13852G

Silicon Carbide SiC MOSFET - 33 mohm, 650V, M2, TO-247-4L

Features ?Typ.RDS(on)=33m@VGS=18V Typ.RDS(on)=45m@VGS=15V ?UltraLowGateCharge(QG(tot)=105nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=162pF) ?100%AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a,

ONSEMION Semiconductor

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98AON13852G

Silicon Carbide (SiC) MOSFET - EliteSiC, 23mohm, 650 V, M3S, TO-247-4L

Features ?TypicalRDS(on)=23m@VGS=18V ?UltraLowGateCharge(QG(tot)=69nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=153pF) ?100%AvalancheTested ?ThisDeviceisHalideFreeandRoHSCompliantwithExemption7a, Pb?Free2LI(onsecondlevelinterconnection)

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

98AON13852G

Silicon Carbide (SiC) MOSFET – EliteSiC, 22 mohm, 1200V, M3, TO-247-4L

Features ?Typ.RDS(on)=22m@VGS=18V ?LowSwitchingLosses(Typ.EON490Jat40A,800V) ?100%AvalancheTested ?ThisDeviceisHalideFreeandRoHSCompliantwithExemption7a, Pb?Free2LI(onSecondLevelInterconnection) TypicalApplications ?SolarInverters ?Elect

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

98AON13852G

Silicon Carbide (SiC) MOSFET – EliteSiC, 160mohm, 1200V, M1, TO-247-4L

Features ?Typ.RDS(on)=160m ?UltraLowGateCharge(QG(tot)=34nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=49.5pF) ?100%AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection)

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

98AON13852G

Silicon Carbide SiC MOSFET - 44 mohm, 650 V, M2, TO-247-4L

Features ?Typ.RDS(on)=44m@VGS=18V Typ.RDS(on)=60m@VGS=15V ?UltraLowGateCharge(QG(tot)=74nC) ?LowCapacitance(Coss=133pF) ?100%AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondleve

ONSEMION Semiconductor

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98AON13852G

IGBT - Power, Co-PAK, N-Channel, Field Stop VII (FS7), SCR, TO247-4L 1200 V, 1.38 V, 25 A

Description Usingthenovelfieldstop7thgenerationIGBTtechnologyandthe Gen7DiodeinTO2474?leadpackage,thisdeviceofferstheoptimum performancewithlowonstatevoltageandminimalswitchinglosses forbothhardandsoftswitchingtopologiesinautomotiveapplications. Features

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

98AON13852G

Silicon Carbide (SiC) MOSFET – EliteSiC, 33mohm, 650V, M2, TO-247-4L

Features ?Typ.RDS(on)=33m@VGS=18V Typ.RDS(on)=45m@VGS=15V ?UltraLowGateCharge(QG(tot)=105nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=162pF) ?100%AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a,

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

98AON13852G

Silicon Carbide (SiC) MOSFET – 20 mohm, 1200V, M1, TO-247-4L

Features ?Typ.RDS(on)=20m ?UltraLowGateCharge(QG(tot)=220nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=258pF) ?100%AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection)

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

98AON13852G

Silicon Carbide (SiC) MOSFET – 20 mohm, 1200V, M1, TO-247-4L

Features ?Typ.RDS(on)=20m ?UltraLowGateCharge(QG(tot)=220nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=258pF) ?100%AvalancheTested ?AEC?Q101QualifiedandPPAPCapable ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecond

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

98AON13852G

Silicon Carbide (SiC) MOSFET – EliteSiC, 20mohm, 1200V, M1, TO-247-4L

Features ?Typ.RDS(on)=20m ?UltraLowGateCharge(QG(tot)=220nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=258pF) ?100%AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection)

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

98AON13852G

Silicon Carbide SiC MOSFET - 20 mohm, 900 V, M2, TO-247-4L

Features ?Typ.RDS(on)=20m@VGS=15V Typ.RDS(on)=16m@VGS=18V ?UltraLowGateCharge(QG(tot)=196nC) ?LowEffectiveOutputCapacitance(Coss=296pF) ?100%UILTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevel

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

98AON13852G

Silicon Carbide (SiC) MOSFET - EliteSiC, 23mohm, 650 V, M3S, TO-247-4L

Features ?TypicalRDS(on)=23m@VGS=18V ?UltraLowGateCharge(QG(tot)=69nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=153pF) ?100%AvalancheTested ?AEC?Q101QualifiedandPPAPCapable ?ThisDeviceisHalideFreeandRoHSCompliantwithExemption7a, Pb?Free

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

98AON13852G

Silicon Carbide SiC MOSFET - 60 mohm, 900V, M2, TO-247-4L

Features ?Typ.RDS(on)=60m@VGS=15V Typ.RDS(on)=43m@VGS=18V ?UltraLowGateCharge(typ.QG(tot)=87nC) ?LowEffectiveOutputCapacitance(typ.Coss=113pF) ?100%UILTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onseco

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

98AON13852G

IGBT - Power, Single, N-Channel, Field Stop VII (FS7), SCR, Power TO247-4L 1200 V, 1.4 V, 40 A

Description Usingthenovelfieldstop7thgenerationIGBTtechnology inTO2474?leadpackage,thisdeviceofferstheoptimum performancewithlowonstatevoltageandminimalswitchinglosses forbothhardandsoftswitchingtopologiesinautomotiveapplications. Features ?ExtremelyEffici

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

98AON13852G

Silicon Carbide (SiC) MOSFET – 22 mohm, 1200V, M3S, TO-247-4

Features ?Typ.RDS(on)=22m@VGS=18V ?UltraLowGateCharge(QG(tot)=151nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=244pF) ?100%AvalancheTested ?AEC?Q101QualifiedandPPAPCapable ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2L

ONSEMION Semiconductor

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98AON13852G

MOSFET - SiC Power, Single N-Channel, TO247-4L 650 V, 12 m, 142 A

ONSEMION Semiconductor

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98AON13852G

IGBT - FS, Trench 1200 V, 40 A

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

98AON13852G

IGBT - Field Stop, IV/4 Lead

ONSEMION Semiconductor

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98AON13852G

IGBT - Ultra Field Stop

ONSEMION Semiconductor

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