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98ASB42514B中文資料安森美半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書

98ASB42514B
廠商型號(hào)

98ASB42514B

功能描述

Switch-mode Schottky Power Rectifier

文件大小

173.79 Kbytes

頁面數(shù)量

5

生產(chǎn)廠商 ON Semiconductor
企業(yè)簡稱

ONSEMI安森美半導(dǎo)體

中文名稱

安森美半導(dǎo)體公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-26 23:00:00

98ASB42514B規(guī)格書詳情

The Switch?mode Power Rectifier employs the Schottky Barrier

principle in a large area metal?to?silicon power diode.

State?of?the?art geometry features epitaxial construction with oxide

passivation and metal overlay contact. Ideally suited for use as

rectifiers in very low?voltage, high?frequency switching power

supplies, free wheeling diodes and polarity protection diodes.

Features

? Highly Stable Oxide Passivated Junction

? Very Low Forward Voltage Drop

? Matched Dual Die Construction

? High Junction Temperature Capability

? High dv/dt Capability

? Guardring for Stress Protection

? Epoxy Meets UL 94 V?0 @ 0.125 in

? Electrically Isolated. No Isolation Hardware Required.

? These Devices are Pb?Free and are RoHS Compliant

Mechanical Characteristics:

? Case: Epoxy, Molded

? Weight: 1.9 Grams (Approximately)

? Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

? Lead Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

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