98ASB42669B中文資料安森美半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

These devices employ the Schottky Barrier principle in a

metal?to?silicon power rectifier. Features epitaxial construction with

oxide passivation and metal overlay contact. Ideally suited for low

voltage, high frequency switching power supplies; free wheeling

diodes and polarity protection diodes.

Features

? Compact Package with J?Bend Leads Ideal for Automated Handling

? Highly Stable Oxide Passivated Junction

? Guard?Ring for Overvoltage Protection

? Low Forward Voltage Drop

? ESD Ratings:

? Human Body Model = 3B (> 16000 V)

? Machine Model = C (> 400 V)

? NRVB Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC?Q101

Qualified and PPAP Capable*

? These are Pb?Free Devices

Mechanical Characteristics

? Case: Molded Epoxy

? Epoxy Meets UL 94 V?0 @ 0.125 in

? Weight: 95 mg (Approximately)

? Cathode Polarity Band

? Maximum Temperature of 260°C/10 Seconds for Soldering

? Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable