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CEB9N25	文件：505.57 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■250V,8.1A,RDS(ON)=450m?@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEP9N25	文件：505.57 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■250V,8.1A,RDS(ON)=450m?@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
FQB9N25	文件：729.53 Kbytes Page：9 Pages	250VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Features ?9.4A,250V,RDS(on)=0.42?@VGS=10V ?Lowgatecharge(typical15.5nC) ?LowCrss(typical15pF) ?Fastswitching	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQB9N25C	文件：869.21 Kbytes Page：9 Pages	250VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwith	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQD9N25	文件：724.11 Kbytes Page：9 Pages	250VN-ChannelMOSFET Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQD9N25	文件：305.44 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=7.4A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.42Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
FQD9N25	文件：927.63 Kbytes Page：10 Pages	N-ChannelQFET?MOSFET250V,7.4A,420廓 Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQD9N25TM	文件：752.35 Kbytes Page：8 Pages	250VN-ChannelMOSFET Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQI9N25	文件：729.53 Kbytes Page：9 Pages	250VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Features ?9.4A,250V,RDS(on)=0.42?@VGS=10V ?Lowgatecharge(typical15.5nC) ?LowCrss(typical15pF) ?Fastswitching	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQI9N25C	文件：869.21 Kbytes Page：9 Pages	250VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwith	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQP9N25	文件：296.07 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=9.4A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.42Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
FQP9N25	文件：713.69 Kbytes Page：8 Pages	250VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproductusingFairchildsproprietary,planarstripe,DMOStechnology. Thisadvancetechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQP9N25C	文件：1.13618 Mbytes Page：10 Pages	250VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwith	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQPF9N25	文件：731.1 Kbytes Page：8 Pages	250VN-ChannelMOSFET 250VN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQPF9N25	文件：278.08 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=6.7A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.42Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
FQPF9N25C	文件：277.98 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=8.8A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.43Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
FQPF9N25C	文件：1.13618 Mbytes Page：10 Pages	250VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwith	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQU9N25	文件：724.11 Kbytes Page：9 Pages	250VN-ChannelMOSFET Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQU9N25	文件：330.28 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=7.4A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.42Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
FQU9N25	文件：927.63 Kbytes Page：10 Pages	N-ChannelQFET?MOSFET250V,7.4A,420廓 Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild

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供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市國(guó)宇半導(dǎo)體科技有限公司	9N25C	FK	23+	TO220	10000	公司只做原裝正品	詢價(jià)
深圳市創(chuàng)新跡電子有限公司	9N25C	FAIRCHILD	2023+	TO220F	8700	原裝現(xiàn)貨	詢價(jià)
深圳市宏捷佳電子科技有限公司	9N25C	FK	24+	TOTO-220	12300	獨(dú)立分銷商公司只做原裝誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證	詢價(jià)
深圳市益百分電子有限公司	9N30/7430			DIP14	2890	全新原裝進(jìn)口自己庫(kù)存優(yōu)勢(shì)	詢價(jià)
深圳市澳億芯電子科技有限公司	9N30/7430	FSC	90+	DIP	3	普通	詢價(jià)
上海意淼電子科技有限公司	9N30/7430		23+	DIP14	20000	全新原裝假一賠十	詢價(jià)
標(biāo)準(zhǔn)國(guó)際(香港)有限公司	9N30/7430DC	9N30/7430DC		1	1		詢價(jià)
深圳市勤思達(dá)科技有限公司	9N308	FAIRCHILD	12+	TO-252	15000	全新原裝,絕對(duì)正品,公司現(xiàn)貨供應(yīng)。	詢價(jià)
深圳市博浩通科技有限公司	9N308	FSC	23+	TO-252	6000	專業(yè)優(yōu)勢(shì)供應(yīng)	詢價(jià)
深圳市鼎欣微電子有限公司	9N308	FAIRCHILD/仙童	21+	TO-252	30000	只做正品原裝現(xiàn)貨	詢價(jià)

更多9N25C供應(yīng)商更新時(shí)間2025-1-18 14:30:00

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