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9NM60L-TND-R

9.0A, 600V N-CHANNEL SUPER-JUNCTION MOSFET

?DESCRIPTION TheUTC9NM60isaSuperJunctionMOSFETStructureand isdesignedtohavebettercharacteristics,suchasfastswitching time,lowgatecharge,lowon-stateresistanceandahighrugged avalanchecharacteristics.ThispowerMOSFETisusuallyusedat DC-DCconvertersforpowera

UTCUnisonic Technologies

友順友順科技股份有限公司

9NM60N

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

STD9NM60

N-CHANNEL600V-0.55Ω-8.3ATO-220/DPAK/IPAKMDmesh?PowerMOSFET

TYPICALRDS(on)=0.55Ω HIGHdv/dtANDAVALANCHECAPABILITIES IMPROVEDESDCAPABILITY LOWINPUTCAPACITANCEANDGATE CHARGE LOWGATEINPUTRESISTANCE TIGHTPROCESSCONTROLANDHIGH MANUFACTORINGYIELDS DESCRIPTION TheMDmesh?isanewrevolutionaryMOSFET technologythata

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STD9NM60N

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

STD9NM60N

N-channel600V,0.63ohm,6.5ATO-220,TO-220FP,DPAKMDmeshllPowerMOSFET

Description ThisseriesofdevicesisrealizedwiththesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayoutto yieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemo

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STF9NM60N

N-channel600V,0.63ohm,6.5ATO-220,TO-220FP,DPAKMDmeshllPowerMOSFET

Description ThisseriesofdevicesisrealizedwiththesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayoutto yieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemo

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STF9NM60N

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

STP9NM60

N-CHANNEL600V-0.55Ω-8.3ATO-220/DPAK/IPAKMDmesh?PowerMOSFET

TYPICALRDS(on)=0.55Ω HIGHdv/dtANDAVALANCHECAPABILITIES IMPROVEDESDCAPABILITY LOWINPUTCAPACITANCEANDGATE CHARGE LOWGATEINPUTRESISTANCE TIGHTPROCESSCONTROLANDHIGH MANUFACTORINGYIELDS DESCRIPTION TheMDmesh?isanewrevolutionaryMOSFET technologythata

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STP9NM60N

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

STP9NM60N

N-channel600V,0.63ohm,6.5ATO-220,TO-220FP,DPAKMDmeshllPowerMOSFET

Description ThisseriesofdevicesisrealizedwiththesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayoutto yieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemo

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STP9NM60N

iscN-ChannelMOSFETTransistor

FEATURES ?DrainCurrent–ID=6.5A@TC=25℃ ?DrainSourceVoltage- :VDSS=600V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.745Ω(Max) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ?Switching

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
UTC
20232024
TO263
6000
老牌代理,長(zhǎng)期現(xiàn)貨
 詢價(jià)
TOSHIBA/東芝
23+
TO-220F
10000
公司只做原裝正品
 詢價(jià)
TOSHIBA/東芝
TO-220F
22+
6000
十年配單,只做原裝
 詢價(jià)
ST
23+
TO-220F
16900
正規(guī)渠道,只有原裝!
 詢價(jià)
ST
22+
TO-220F
16900
支持樣品 原裝現(xiàn)貨 提供技術(shù)支持!
 詢價(jià)
TOSHIBA/東芝
22+
TO-220F
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
 詢價(jià)
TOSHIBA
24+
TO-TO-220F
12300
獨(dú)立分銷商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證
 詢價(jià)
TOSHIBA
1822+
TO-220F
9852
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!
 詢價(jià)
TOSHIBA
18+
TO-220F
41200
原裝正品,現(xiàn)貨特價(jià)
 詢價(jià)
拓鋒
23+
TSSOP8
69820
終端可以免費(fèi)供樣,支持BOM配單!
 詢價(jià)
更多9NM60L-TND-R供應(yīng)商 更新時(shí)間2025-1-18 15:00:00

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