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A5G23H065N_V01中文資料恩智浦數(shù)據(jù)手冊PDF規(guī)格書

A5G23H065N_V01
廠商型號

A5G23H065N_V01

功能描述

Airfast RF Power GaN Transistor

文件大小

192.51 Kbytes

頁面數(shù)量

11

生產(chǎn)廠商 NXP Semiconductors
企業(yè)簡稱

nxp恩智浦

中文名稱

恩智浦半導(dǎo)體公司官網(wǎng)

原廠標識
數(shù)據(jù)手冊

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更新時間

2025-2-13 11:09:00

A5G23H065N_V01規(guī)格書詳情

This 8.8 W asymmetrical Doherty RF power GaN transistor is designed for

cellular base station applications requiring very wide instantaneous bandwidth

capability covering the frequency range of 2300 to 2400 MHz.

This part is characterized and performance is guaranteed for applications

operating in the 2300 to 2400 MHz band. There is no guarantee of performance

when this part is used in applications designed outside of these frequencies.

Features

? High terminal impedances for optimal broadband performance

? Improved linearized error vector magnitude with next generation signal

? Able to withstand extremely high output VSWR and broadband operating

conditions

? Designed for low complexity linearization systems

? Optimized for massive MIMO active antenna systems for 5G base stations

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