A5M36SG239T2中文資料恩智浦數(shù)據(jù)手冊PDF規(guī)格書

1 General description

The A5M36SG239 is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems, outdoor small cells and low power remote radio heads. The field-proven LDMOS and GaN power amplifiers are designed for TDD LTE and 5G systems. The module includes an autobias feature that automatically sets the transistor bias upon power up and an integrated sensor that monitors the temperature. Communications to the module can be accomplished via either I2C or SPI.

2 Features and benefits

? 2-stage module solution that includes an LDMOS integrated circuit as a driver and a GaN final stage amplifier

? Advanced high performance in-package Doherty

? Fully matched (50 ohm input/output, DC blocked)

? Designed for low complexity digital linearization systems

? Reduced memory effects for improved linearized error vector magnitude

? Autobias on power up

? Temperature sensing

? Digital interface (I2C or SPI)

? Embedded registers and DACs for setting bias conditions

? Tx enable control pin for TDD operation