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IRFR9210

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Surface-mount(IRFR9210,SiHFR9210) ?Straightlead(IRFU9210,SiHFU9210) ?Availableintapeandreel ?P-channel ?Fastswitching ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR9210

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=-1.9A@TC=25℃ ·DrainSourceVoltage- :VDSS=-200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3Ω(Max)@VGS=-10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFR9210PBF

HEXFETPOWERMOSFET(VDSS=-200V,RDS(on)=3.0廓,ID=-1.9A)

IRF

International Rectifier

IRFR9210PBF

PowerMOSFET

DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAK

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR9210PBF

PowerMOSFET

DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR9210PBF

PowerMOSFET

DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR9210PBF

PowerMOSFET

DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR9210PBF

PowerMOSFET

DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR9210PBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR9210PBF

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Surface-mount(IRFR9210,SiHFR9210) ?Straightlead(IRFU9210,SiHFU9210) ?Availableintapeandreel ?P-channel ?Fastswitching ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
AMIC
1706+
SAWNWafer
8660
只做原裝進(jìn)口,假一罰十
 詢價(jià)
TAIYO/太誘
2023+
5D28
48000
AI智能識(shí)別、工業(yè)、汽車、醫(yī)療方案LPC批量及配套一站
 詢價(jià)
LATTICE
24+/25+
112
原裝正品現(xiàn)貨庫(kù)存價(jià)優(yōu)
 詢價(jià)
TOKO
2016+
SMD
3000
只做原裝,假一罰十,公司可開(kāi)17%增值稅發(fā)票!
 詢價(jià)
24+
147074
詢價(jià)
TOKO
2016+
5632
只做進(jìn)口原裝正品!現(xiàn)貨或者訂貨一周貨期!只要要網(wǎng)上有
 詢價(jià)
TOKO
23+
SMD
9868
專做原裝正品,假一罰百!
 詢價(jià)
MURATA/村田
23+
NA
90000
一定原裝深圳現(xiàn)貨
 詢價(jià)
TOKO
20+
電感器
682000
電感原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開(kāi)原型號(hào)增稅票
 詢價(jià)
murata
24+
6030
80000
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增
 詢價(jià)
更多A9210B供應(yīng)商 更新時(shí)間2025-4-23 15:10:00

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