Description

The ACE11204A is the N-Channel enhancement mode power field effect transistors are produced

using high cell density, DMOS trench technology. This high-density process is especially tailored to

minimize on-state resistance and provide superior switching performance. These devices are particularly

suited for low voltage applications such as notebook computer power management and other battery

powered circuits where high-side switching, low in-line power loss and resistance to transients are

needed.

Features

? 20V/0.65A,RDS(ON)=380m?@VGS=4.5V

20V/0.55A,RDS(ON)=450m?@VGS=2.5V

20V/0.45A,RDS(ON)=800m?@VGS=1.8V

? Super high-density cell design for extremely low RDS (ON)

? Exceptional on-resistance and maximum DC current capability

Applications

? Drivers: Relays/Solenoids/Lamps/Hammers

? Power Supply Converter Circuits

? Load/Power Switching Cell Phones, Pagers