ACE11205A中文資料ACE數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

Description

The ACE11205A is the P-Channel enhancement mode power field effect transistors are produced using

high cell density, DMOS trench technology. This high-density process is especially tailored to minimize

on-state resistance and provide superior switching performance.

These devices are particularly suited for low voltage applications such as notebook computer power

management and other battery powered circuits where high-side switching, low in-line power loss, and

resistance to transients are needed.

Features

? -20V/0.45A, RDS(ON)= 520mΩ@VGS=-4.5V

-20V/0.35A, RDS(ON)= 700mΩ@VGS=-2.5V

-20V/0.25A, RDS(ON)= 1500mΩ@VGS=-1.8V

? Super high-density cell design for extremely low RDS (ON)

? Exceptional on-resistance and maximum DC current capability

Application

? Drivers: Relays/Solenoids/Lamps/Hammers

? Power Supply Converter Circuits

? Load/Power Switching Cell Phones, Pagers