ACE11306A中文資料ACE數(shù)據(jù)手冊PDF規(guī)格書

Description

The ACE11306A is the N-Channel enhancement mode power field effect transistors are produced

using high cell density, DMOS trench technology.

This high-density process is especially tailored to minimize on-state resistance and provide superior

switching performance. These devices are particularly suited for low voltage application such as notebook

computer power management and other batter powered circuits where high-side switching, low in-line

power loss and resistance to transients are needed.

Features

? 30V/0.95A, RDS(ON)=550mΩ@VGS=4.5V

? 30V/0.75A, RDS(ON)=650mΩ@VGS=2.5V

? 30V/0.65A, RDS(ON)=850mΩ@VGS=1.8V

? Super high-density cell design for extremely low RDS(ON)

? Exceptional on-resistance and maximum DC current capability

Application

? Power Management in Note book

? Portable Equipment

? Battery Powered System

? DC/DC Converter

? Load Switch

? DSC

? LCD Display inverter