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ADE-901

FrequencyMixer

MINI

Mini-Circuits

ADE-R901

HighReliabilityMixerLevel7(LOPower7dBm)300to1000MHz

MINI

Mini-Circuits

ADE-R901+

HighReliabilityMixerLevel7(LOPower7dBm)300to1000MHz

MINI

Mini-Circuits

ADE-R901LH

HighReliabilityMixerLevel10(LOPower10dBm)300to1000MHz

MINI

Mini-Circuits

ADE-R901LH+

HighReliabilityMixerLevel10(LOPower10dBm)300to1000MHz

MINI

Mini-Circuits

ADG901

Wideband,40dBIsolationat1GHz,CMOS1.65Vto2.75V,SPSTSwitches

GENERALDESCRIPTION TheADG901/ADG902arewidebandswitchesthatuseaCMOSprocesstoprovidehighisolationandlowinsertionlossto1GHz.TheADG901isanabsorptive(matched)switchwith50Ωterminatedshuntlegs,whiletheADG902isareflectiveswitch.Thesedevicesaredesignedsuchtha

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

ADG901BRM

Wideband,40dBIsolationat1GHz,CMOS1.65Vto2.75V,SPSTSwitches

GENERALDESCRIPTION TheADG901/ADG902arewidebandswitchesthatuseaCMOSprocesstoprovidehighisolationandlowinsertionlossto1GHz.TheADG901isanabsorptive(matched)switchwith50Ωterminatedshuntlegs,whiletheADG902isareflectiveswitch.Thesedevicesaredesignedsuchtha

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

ADG901BRM

Wideband,40dBIsolationat1GHz,CMOS1.65Vto2.75V,SPSTSwitches

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

ADG901-EP

Lowpowerconsumption

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

ADS901

10-Bit,20MHz,3VSupplyANALOG-TO-DIGITALCONVERTER

BURR-BROWN

Burr-Brown (TI)

ADS901

ANALOG-TO-DIGITALCONVERTER

TITexas Instruments

德州儀器美國(guó)德州儀器公司

ADS901

10-Bit,20MHz,3VSupplyANALOG-TO-DIGITALCONVERTER

TI1Texas Instruments

德州儀器

ADS901E

10-Bit,20MHz,3VSupplyANALOG-TO-DIGITALCONVERTER

BURR-BROWN

Burr-Brown (TI)

ADS901E

10-Bit,20MHz,3VSupplyANALOG-TO-DIGITALCONVERTER

TI1Texas Instruments

德州儀器

AFIC901N

RFLDMOSWidebandIntegratedPowerAmplifier

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

AN901

DESIGNGUIDEFORISOLATEDDC/DC

SILABS

Silicon Laboratories

AN901

Electromagneticcompatibility

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

APT901RAN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=9.5A@TC=25℃ ·DrainSourceVoltage :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.0Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

APT901RBN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=11A@TC=25℃ ·DrainSourceVoltage :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.0Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

APT901RDN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=11A@TC=25℃ ·DrainSourceVoltage :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.0Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

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HARRIS
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52
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6722
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5650
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2023+
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6540
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更多ACE901BN供應(yīng)商 更新時(shí)間2025-1-9 15:06:00