ACT-SF41632N-26F2Q中文資料AEROFLEX數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

FEATURES

■ 4 – 128K x 8 SRAMs & 4 – 512K x 8 Flash Die in One MCM

■ Access Times of 25ns, 35ns (SRAM) and 60ns, 70ns, 90ns (Flash)

■ Organized as 128K x 32 of SRAM and 512K x 32 of Flash Memory with Common Data Bus

■ Low Power CMOS

■ Input and Output TTL Compatible Design

■ MIL-PRF-38534 Compliant MCMs Available

■ Decoupling Capacitors and Multiple Grounds for Low Noise

■ Commercial, Industrial and Military Temperature Ranges

■ Industry Standard Pinouts

■ TTL Compatible Inputs and Outputs

■ Packaging – Hermetic Ceramic

● 66–Lead, PGA-Type, 1.385SQ x 0.245max, Aeroflex code# P1,P5 with/without shoulders)

● 68–Lead, Dual-Cavity CQFP(F2), 0.88SQ x .20max (.18 max thickness available, contact factory for details) (Drops into the 68 Lead JEDEC .99SQ CQFJ footprint)

FLASH MEMORY FEATURES

■ Sector Architecture (Each Die)

● 8 Equal Sectors of 64K bytes each

● Any combination of sectors can be erased with one command sequence.

■ +5V Programing, +5V Supply

■ Embedded Erase and Program Algorithms

■ Hardware and Software Write Protection

■ Page Program Operation and Internal Program Control Time.

■ 10,000 Erase/Program Cycles