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AD647SH

Ultralow Drift, Dual BiFET Op Amp

PRODUCTDESCRIPTION TheAD647isanultralowdrift,dualJFETamplifierthatcombineshighperformanceandconvenienceinasinglepackage.TheAD647usesthemostadvancedion-implantationandlaserwaferdrifttrimmingtechnologiestoachievethehighestperformancecurrentlyavailableinad

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

B647

PNPPowerTransistor

Features: ◆Highswitchingspeed ◆Widesafeoperationarea Applications: ◆ElectronicalBallastsforfluorescentlighting ◆ChargerandSwitchmodepowersupplies

JINGDAOShenzhen Jingdao Electronic Co.,Ltd

晶導(dǎo)深圳市晶導(dǎo)電子有限公司

BD647

NPNSILICONPOWERDARLINGTONS

PNPSILICONPOWERDARLINGTONS ●DesignedforComplementaryUsewithBD645,BD647,BD649andBD651 ●62.5Wat25°CCaseTemperature ●8AContinuousCollectorCurrent ●MinimumhFEof750at3V,3A

POINN

Power Innovations Ltd

BD647

PNPSILICONDARLINGTONTRANSISTORS

NPNSILICONDARLINGTONTRANSISTORS

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BD647

NPNSILICONDARLINGTONTRANSISTORS

NPNSILICONDARLINGTONTRANSISTORS

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BD647

NPNSILICONPOWERDARLINGTONS

BournsBourns Electronic Solutions

伯恩斯

BD647

NPNSILICONPOWERDARLINGTONS

NPNSILICONPOWERDARLINGTONS ●RoHScompliant* ●DesignedforComplementaryUsewithBD646,BD648,BD650andBD652 ●62.5Wat25°CCaseTemperature ●8AContinuousCollectorCurrent ●MinimumhFEof750at3V,3A

BournsBourns Electronic Solutions

伯恩斯

BD647

SiliconNPNPowerTransistors

SiliconPNPPowerTransistors DESCRIPTION ·WithTO-220Cpackage ·ComplementtotypeBD645/647/649/651 ·DARLINGTON APPLICATIONS ·Foruseinoutputstagesinaudioequipment,generalamplifier,andanalogueswitchingapplications

SAVANTIC

Savantic, Inc.

BD647

SILICONDARLINGTONPOWERTRANSISTORS

SILICONDARLINGTONPOWERTRANSISTORS PNPepitaxial-basetransistorsinamonolithicDalringtoncircuitandhousedinaTO-220enveloppe.Theyareintendedforoutputstagesinaudioequipment,generalamplifiers,andanalogueswitchingapplication. NPNcomplementsareBD643,BD645,BD647

COMSET

Comset Semiconductor

BD647

iscSiliconNPNDarlingtonPowerTransistor

*Collector-EmitterBreakdownVoltage-:V(BR)CEO=80V(Min) *HighDCCurrentGain:hFE=750(Min)@IC=3A *LowSaturationVoltage *ComplementtoTypeBD648

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

BD647

NPNSILICONPOWERDARLINGTONS

NPNSILICONPOWERDARLINGTONS ●RoHScompliant* ●DesignedforComplementaryUsewithBD646,BD648,BD650andBD652 ●62.5Wat25°CCaseTemperature ●8AContinuousCollectorCurrent ●MinimumhFEof750at3V,3A

BournsBourns Electronic Solutions

伯恩斯

BD647

SILICONDARLINGTONPOWERTRANSISTORS

COMSET

Comset Semiconductor

BD647

SiliconNPNDarlingtonPowerTransistor

Eplbasepowerdarlingtontransistors(62.5W) BD643,BD645,BD647,andBD649aremonolithicNPNSiliconepibasepowerdarlingtontransistorswithdiodeandresistorsinaTO220ABplasticpackage(TOP-66).Thecollectorsofthetwotransistorsareelectricallyconnectedtothemetallicmounting

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

BD647F

iscSiliconNPNDarlingtonPowerTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

BLF647

UHFpowerLDMOStransistor

DESCRIPTION SiliconN-channelenhancementmodelateralD-MOSpush-pulltransistorinaSOT540Apackagewithceramiccap.Thecommonsourceisconnectedtothemountingflange. FEATURES ?Highpowergain ?Easypowercontrol ?Excellentruggedness ?SourceonundersideeliminatesDCisolators

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BLF647

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BLF647P

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BLF647P

BroadbandpowerLDMOStransistor

Generaldescription A200WLDMOSRFpowertransistorforbroadcasttransmitterandindustrial applications.ThetransistorissuitableforthefrequencyrangeHFto1500MHz.The excellentruggednessandbroadbandperformanceofthisdevicemakesitidealfordigital applications. Featuresa

AmpleonAmpleon USA Inc.

安譜隆

BLF647P(S)

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BLF647PS

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

詳細參數(shù)

  • 型號:

    AD647SH

  • 制造商:

    AD

  • 制造商全稱:

    Analog Devices

  • 功能描述:

    Ultralow Drift, Dual BiFET Op Amp

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AD
24+
CAN8
1032
詢價
AD
2015+
SOP/DIP
19889
一級代理原裝現(xiàn)貨,特價熱賣!
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AnalogDevices
CAN
1000
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AD
24+
CAN
6980
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AD
2339+
NA
6521
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AD
22+
CAN
8200
全新原裝現(xiàn)貨!自家?guī)齑?
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ADI/亞德諾
專業(yè)鐵帽
CAN8
1500
原裝鐵帽專營,代理渠道量大可訂貨
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ADI/亞德諾
專業(yè)鐵帽
CAN8
67500
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ADI
2023+
A/N
80000
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AD
24+
CAN8
6540
原裝現(xiàn)貨/歡迎來電咨詢
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更多AD647SH供應(yīng)商 更新時間2024-12-23 10:50:00