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AD651SQ

MonolithicSynchronousVoltage-to-FrequencyConverter

FEATURES Full-ScaleFrequency(Upto2MHz)SetbyExternal SystemClock NoCriticalExternalComponentsRequired ExtremelyLowLinearityError(0.005maxat100kHz FS,0.02maxat2MHzFS) LowDrift(25ppm/oCmax) DualorSingleSuppilyOperation VolkageorCurrentInput LowCost($7.95,

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

AN651

EVALUATIONBOARDTESTPROCEDURE

SILABS

Silicon Laboratories

ATS651LSH

Two-WireSelf-CalibratingDifferentialSpeedandDirectionSensorwithVibrationImmunity

FeaturesandBenefits ?Rotationaldirectiondetection ?Fullyoptimizeddigitaldifferentialgear-toothsensor ?Single-chipsensingICforhighreliability ?Smallmechanicalsize(8mmdiameter×5.5mmvertical,flat-to-flat) ?Internalcurrentregulatorfor2-wireoperation ?Automatic

Allegro

Allegro MicroSystems

ATS651LSH

Two-WireSelf-CalibratingDifferentialSpeedandDirectionSensorwithVibrationImmunity

FeaturesandBenefits ?Rotationaldirectiondetection ?Fullyoptimizeddigitaldifferentialgear-toothsensor ?Single-chipsensingICforhighreliability ?Smallmechanicalsize(8mmdiameter×5.5mmvertical,flat-to-flat) ?Internalcurrentregulatorfor2-wireoperation ?Automatic

Allegro

Allegro MicroSystems

ATS651LSHTN-T

Two-WireSelf-CalibratingDifferentialSpeedandDirectionSensorwithVibrationImmunity

FeaturesandBenefits ?Rotationaldirectiondetection ?Fullyoptimizeddigitaldifferentialgear-toothsensor ?Single-chipsensingICforhighreliability ?Smallmechanicalsize(8mmdiameter×5.5mmvertical,flat-to-flat) ?Internalcurrentregulatorfor2-wireoperation ?Automatic

Allegro

Allegro MicroSystems

ATS651LSHTN-T

Two-WireSelf-CalibratingDifferentialSpeedandDirectionSensorwithVibrationImmunity

FeaturesandBenefits ?Rotationaldirectiondetection ?Fullyoptimizeddigitaldifferentialgear-toothsensor ?Single-chipsensingICforhighreliability ?Smallmechanicalsize(8mmdiameter×5.5mmvertical,flat-to-flat) ?Internalcurrentregulatorfor2-wireoperation ?Automatic

Allegro

Allegro MicroSystems

BD651

NPNSILICONPOWERDARLINGTONS

PNPSILICONPOWERDARLINGTONS ●DesignedforComplementaryUsewithBD645,BD647,BD649andBD651 ●62.5Wat25°CCaseTemperature ●8AContinuousCollectorCurrent ●MinimumhFEof750at3V,3A

POINN

Power Innovations Ltd

BD651

NPNSILICONPOWERDARLINGTONS

BournsBourns Electronic Solutions

伯恩斯

BD651

NPNSILICONPOWERDARLINGTONS

NPNSILICONPOWERDARLINGTONS ●RoHScompliant* ●DesignedforComplementaryUsewithBD646,BD648,BD650andBD652 ●62.5Wat25°CCaseTemperature ●8AContinuousCollectorCurrent ●MinimumhFEof750at3V,3A

BournsBourns Electronic Solutions

伯恩斯

BD651

iscSiliconNPNDarlingtonPowerTransistor

DESCRIPTION ?Collector-EmitterBreakdownVoltage-:V(BR)CEO=120V(Min) ?HighDCCurrentGain:hFE=750(Min)@IC=3A ?LowSaturationVoltage ?ComplementtoTypeBD652 APPLICATIONS ?DesignedforuseascomplementaryAFpush-pulloutputstageapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

BD651

SiliconNPNPowerTransistors

SiliconPNPPowerTransistors DESCRIPTION ·WithTO-220Cpackage ·ComplementtotypeBD645/647/649/651 ·DARLINGTON APPLICATIONS ·Foruseinoutputstagesinaudioequipment,generalamplifier,andanalogueswitchingapplications

SAVANTIC

Savantic, Inc.

BD651

SILICONDARLINGTONPOWERTRANSISTORS

SILICONDARLINGTONPOWERTRANSISTORS PNPepitaxial-basetransistorsinamonolithicDalringtoncircuitandhousedinaTO-220enveloppe.Theyareintendedforoutputstagesinaudioequipment,generalamplifiers,andanalogueswitchingapplication. NPNcomplementsareBD643,BD645,BD647

COMSET

Comset Semiconductor

BD651

SILICONDARLINGTONPOWERTRANSISTORS

COMSET

Comset Semiconductor

BD651

NPNSILICONPOWERDARLINGTONS

NPNSILICONPOWERDARLINGTONS ●RoHScompliant* ●DesignedforComplementaryUsewithBD646,BD648,BD650andBD652 ●62.5Wat25°CCaseTemperature ●8AContinuousCollectorCurrent ●MinimumhFEof750at3V,3A

BournsBourns Electronic Solutions

伯恩斯

BD651

SiliconNPNDarlingtonPowerTransistor

DESCRIPTION ?Collector-EmitterBreakdownVoltage-:V(BR)CEO=120V(Min) ?HighDCCurrentGain:hFE=750(Min)@lc=3A ?LowSaturationVoltage ?ComplementtoTypeBD652 APPLICATIONS ?DesignedforuseascomplementaryAFpush-pulloutputstageapplications

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

BD651F

iscSiliconNPNDarlingtonPowerTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

C651

500WATTS(AC)DC/DCSINGLEOUTPUT

Features ?SingleOutput ?3Ux42TEx166.5mm ?Weight:3.5kg

POWERBOX

Powerbox manufactures

CMPT651

SURFACEMOUNTNPNHIGHCURRENTTRANSISTOR

SmallSignalTransistor NPN-HighCurrentTransistorChip PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize40x40MILS DieThickness7.1MILS BaseBondingPadArea7.9x8.7MILS Emitter

CentralCentral Semiconductor Corp

美國中央半導(dǎo)體

CMPT651

NPN-HighCurrentTransistorChip

PROCESSCP314V SmallSignalTransistor NPN-HighCurrentTransistorChip

CentralCentral Semiconductor Corp

美國中央半導(dǎo)體

CN651

NPNSILICONPLANAREPITAXIALTRANSISTORS

CDIL

Continental Device India Limited

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AD
24+
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300
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21+
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13880
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ADI/亞德諾
22+
66900
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AnalogDevices
SOP8
2500
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AD
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6980
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AD
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10000
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AD
22+
DIP
8200
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AD
18+
DIP
200
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ADI/亞德諾
23+
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66800
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67500
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更多AD651JQ供應(yīng)商 更新時間2024-12-25 16:30:00

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