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ADG783

2.5ohmQuadSPSTSwitchesinChipScalePackage

GENERALDESCRIPTION TheADG781,ADG782,andADG783aremonolithicCMOSdevicescontainingfourindependentlyselectableswitches.Theseswitchesaredesignedonanadvancedsubmicronprocessthatprovideslowpowerdissipationandhighswitchingspeed,lowonresistance,lowleakagecurrentsand

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

ADG783BCP

2.5ohmQuadSPSTSwitchesinChipScalePackage

GENERALDESCRIPTION TheADG781,ADG782,andADG783aremonolithicCMOSdevicescontainingfourindependentlyselectableswitches.Theseswitchesaredesignedonanadvancedsubmicronprocessthatprovideslowpowerdissipationandhighswitchingspeed,lowonresistance,lowleakagecurrentsand

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

BA783

BandswitchingDiodes

Features ●SiliconEpitaxialPlanarDiodeSwitches ●Forhigh-speedswitchingapplicationandTVtunersinthefrequencyrange of501000MHz.Thedynamicforwardresistanceisconstantandverysmall overawiderangeoffrequencyandforwardcurrent.Thereversecapacitanceis also

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

BA783

BandswitchingDiodes

FEATURES ?SiliconEpitaxialPlanarDiodeSwitches ?ForelectronicbandswitchinginradioandTVtunersinthefrequencyrangeof50…1000MHz.Thedynamicforwardresistanceisconstantandverysmalloverawiderangeoffrequencyandforwardcurrent.Thereversecapacitanceisalsosma

GE

GE Industrial Company

BA783

BandSwitchingDiodes

DESCRIPTION ForelectricbandswitchinginradioandTVtunersinthefrequencyrangeof(50to1000)MHz.Thedynamicforwardresistanceisconstantandverysmalloverawiderangeoffrequencyandforwardcurrent.Thereversecapacitanceisalsosmallandlargelyindependentofthereversevo

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BA783-G

BandSwitchingDiodes

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BA783S

BandswitchingDiodes

FEATURES ?SiliconEpitaxialPlanarDiodeSwitches ?ForelectronicbandswitchinginradioandTVtunersinthefrequencyrangeof50…1000MHz.Thedynamicforwardresistanceisconstantandverysmalloverawiderangeoffrequencyandforwardcurrent.Thereversecapacitanceisalsosmalland

GE

GE Industrial Company

BA783S

BandSwitchingDiodes

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BA783S-V

BandSwitchingDiodes

DESCRIPTION Siliconepitaxialplanardiodeswitches.ForelectricbandswitchinginradioandTVtunersinthefrequencyrangeof(50to1000)MHz.Thedynamicforwardresistanceisconstantandverysmalloverawiderangeoffrequencyandforwardcurrent.Thereversecapacitanceisalsosmall

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BA783-V

BandSwitchingDiodes

DESCRIPTION SiliconepitaxialplanardiodeswitchesForelectricbandswitchinginradioandTVtunersinthefrequencyrangeof(50to1000)MHz.Thedynamicforwardresistanceisconstantandverysmalloverawiderangeoffrequencyandforwardcurrent.Thereversecapacitanceisalsosmalla

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

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AD
2020+
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7500
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21+
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14933
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21+
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13880
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22+
66900
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23+
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8560
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14933
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22+
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354000
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20+
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35830
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24+
35210
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更多AD783JRZ-RL供應(yīng)商 更新時(shí)間2025-2-13 13:57:00