零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
USBSmartCardReaderController | etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商 | etc2 | ||
USBSmartCardReaderControllerTechnicalReferenceManual | ETCList of Unclassifed Manufacturers 未分類制造商 | ETC | ||
Multi-layerChipAntennas | CT Central Technologies | CT | ||
HERMETICALLYSEALEDELECTROMAGNETICRELAY | HONGFAHongfa Technology 宏發(fā)電聲廈門宏發(fā)電聲股份有限公司 | HONGFA | ||
MultilevelPipelineRegisters ThesedevicesaremultilevelpipelineregistersimplementedusingalowpowerCMOSprocess.TheyarepinforpincompatiblereplacementsforindustrystandardmultilevelpipelineregisterssuchastheL29C520andL29C521.TheHSP9520andHSP5921aredirectreplacementsfortheAM29520andAM29521 | Intersil Intersil Corporation | Intersil | ||
MultilevelPipelineRegisters ThesedevicesaremultilevelpipelineregistersimplementedusingalowpowerCMOSprocess.TheyarepinforpincompatiblereplacementsforindustrystandardmultilevelpipelineregisterssuchastheL29C520andL29C521.TheHSP9520andHSP5921aredirectreplacementsfortheAM29520andAM29521 | Intersil Intersil Corporation | Intersil | ||
MultilevelPipelineRegisters ThesedevicesaremultilevelpipelineregistersimplementedusingalowpowerCMOSprocess.TheyarepinforpincompatiblereplacementsforindustrystandardmultilevelpipelineregisterssuchastheL29C520andL29C521.TheHSP9520andHSP5921aredirectreplacementsfortheAM29520andAM29521 | Intersil Intersil Corporation | Intersil | ||
HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | IRF | ||
6A,100V,0.600Ohm,P-ChannelPowerMOSFET 6A,100V,0.600Ohm,P-ChannelPowerMOSFET ThisadvancedpowerMOSFETisdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseareP-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicati | Intersil Intersil Corporation | Intersil | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
FastSwitching DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
iscP-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=-6.8A@TC=25℃ ·DrainSourceVoltage-VDSS=-100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.6Ω(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
PowerMOSFET(Vdss=-100V,Rds(on)=0.48ohm,Id=-6.8A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleon-resistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinter | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
AdvancedProcessTechnology | IRF International Rectifier | IRF | ||
PowerMOSFET(Vdss=-100V,Rds(on)=0.48ohm,Id=-6.8A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | IRF | ||
HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
HEXFETPOWERMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | IRF | ||
ADVANCEDPROCESSTECHNOLOGY | IRF International Rectifier | IRF |
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
AMD |
2016+ |
CDIP-40 |
8880 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價 | ||
AMD |
2339+ |
NA |
6521 |
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存! |
詢價 | ||
AMD |
22+ |
CDIP-40 |
8200 |
全新原裝現(xiàn)貨!自家?guī)齑? |
詢價 | ||
AMD |
23+ |
CDIP-40 |
5177 |
現(xiàn)貨 |
詢價 | ||
ADI/亞德諾 |
21+ |
原封裝 |
13880 |
公司只售原裝,支持實單 |
詢價 | ||
ADI/亞德諾 |
23+ |
QFN |
5000 |
原廠授權(quán)代理,海外優(yōu)勢訂貨渠道。可提供大量庫存,詳 |
詢價 | ||
ADI/亞德諾 |
22+ |
66900 |
原封裝 |
詢價 | |||
ADI/亞德諾 |
23+ |
QFN |
98900 |
原廠原裝正品現(xiàn)貨!! |
詢價 | ||
ADI/亞德諾 |
24+ |
QFN |
96880 |
只做原裝,歡迎來電資詢 |
詢價 | ||
ADI/亞德諾 |
1642+ |
CAN8 |
1225 |
代理品牌 |
詢價 |
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