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ADG636YRU

1 pC Charge Injection, 100 pA Leakage CMOS 5 V/5 V/3 V Dual SPDT Switch

GENERALDESCRIPTION TheADG636isamonolithicdevice,comprisingtwoindependentlyselectableCMOSsinglepole,doublethrow(SPDT) switches.Whenon,eachswitchconductsequallywellinboth directions. TheADG636operatesfromadual±2.7Vto±5.5Vsupply,orfromasinglesupplyof+2.7

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

ADG636YRU

1 pC Charge Injection, 100 pA Leakage, CMOS, ?5 V/5 V/3 V Dual SPDT Switch

GENERALDESCRIPTION TheADG636isamonolithicdevice,comprisingtwoindependentlyselectableCMOSsinglepole,doublethrow(SPDT) switches.Whenon,eachswitchconductsequallywellinboth directions. TheADG636operatesfromadual±2.7Vto±5.5Vsupply,orfromasinglesupplyof+2.7

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

ADG636YRU-REEL

1 pC Charge Injection, 100 pA Leakage, CMOS, ?5 V/5 V/3 V Dual SPDT Switch

GENERALDESCRIPTION TheADG636isamonolithicdevice,comprisingtwoindependentlyselectableCMOSsinglepole,doublethrow(SPDT) switches.Whenon,eachswitchconductsequallywellinboth directions. TheADG636operatesfromadual±2.7Vto±5.5Vsupply,orfromasinglesupplyof+2.7

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

ADG636YRUZ1

1 pC Charge Injection, 100 pA Leakage, CMOS, ?5 V/5 V/3 V Dual SPDT Switch

GENERALDESCRIPTION TheADG636isamonolithicdevice,comprisingtwoindependentlyselectableCMOSsinglepole,doublethrow(SPDT) switches.Whenon,eachswitchconductsequallywellinboth directions. TheADG636operatesfromadual±2.7Vto±5.5Vsupply,orfromasinglesupplyof+2.7

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

ADG636YRUZ-REEL1

1 pC Charge Injection, 100 pA Leakage, CMOS, ?5 V/5 V/3 V Dual SPDT Switch

GENERALDESCRIPTION TheADG636isamonolithicdevice,comprisingtwoindependentlyselectableCMOSsinglepole,doublethrow(SPDT) switches.Whenon,eachswitchconductsequallywellinboth directions. TheADG636operatesfromadual±2.7Vto±5.5Vsupply,orfromasinglesupplyof+2.7

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

ADG636YRUZ-REEL71

1 pC Charge Injection, 100 pA Leakage, CMOS, ?5 V/5 V/3 V Dual SPDT Switch

GENERALDESCRIPTION TheADG636isamonolithicdevice,comprisingtwoindependentlyselectableCMOSsinglepole,doublethrow(SPDT) switches.Whenon,eachswitchconductsequallywellinboth directions. TheADG636operatesfromadual±2.7Vto±5.5Vsupply,orfromasinglesupplyof+2.7

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

AL-HG636A

GreenSMDChipLEDLamps(0.6mmHeight)

A-BRIGHT

A-BRIGHT Inc

AL-HG636D

GreenSMDChipLEDLamps(0.8mmHeight)

A-BRIGHT

A-BRIGHT Inc

AT636

PHASECONTROLTHYRISTOR

PHASECONTROLTHYRISTOR Repetitivevoltageupto1800V Meanon-statecurrent1965A Surgecurrent36kA

POSEICO

Power Semiconductors

ATS636LSE

ProgrammableBackBiasedHall-EffectSwitchwithTPOSFunctionality

FEATURES ChopperStabilization Extremelylowswitch-pointdriftovertemperature On-chipProtection Supplytransientprotection Outputshort-circuitprotection Reverse-batteryprotection TrueZero-SpeedOperation TruePower-OnState Single-chipSensingICforHighReliability O

Allegro

Allegro MicroSystems

ATS636LSETN-T

ProgrammableBackBiasedHall-EffectSwitchwithTPOSFunctionality

FEATURES ChopperStabilization Extremelylowswitch-pointdriftovertemperature On-chipProtection Supplytransientprotection Outputshort-circuitprotection Reverse-batteryprotection TrueZero-SpeedOperation TruePower-OnState Single-chipSensingICforHighReliability O

Allegro

Allegro MicroSystems

ATS636LSETN-T

TheATS636LSEprogrammable,truepower-onstate(TPOS),deviceisoptimizedHall-effectICandrare-earthpelletcombinationsthatswitchinresponsetomagneticsignals...

Allegro

Allegro MicroSystems

BC636

HighCurrentTransistors

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

BC636

COMPLEMENTARYSILICONTRANSISTORS

MICRO-ELECTRONICS

Micro Electronics

BC636

PNPmediumpowertransistors

DESCRIPTION PNPmediumpowertransistorinaTO-92;SOT54plasticpackage.NPcomplements:BC635,BC637andBC639. FEATURES ?Highcurrent(max.1A) ?Lowvoltage(max.80V). APPLICATIONS ?Audioandvideoamplifiers.

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BC636

HighCurrentTransistors(PNPSilicon)

HighCurrentTransistorsPNPSilicon

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

BC636

HighCurrentTransistors

HighCurrentTransistorsPNPSilicon

Motorola

Motorola, Inc

BC636

PNPSiliconAFTransistors(HighcurrentgainHighcollectorcurrent)

PNPSiliconAFTransistors ●Highcurrentgain ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BC635,BC637,BC639(NPN)

SIEMENSSiemens Ltd

西門(mén)子德國(guó)西門(mén)子股份公司

BC636

45V,1APNPmediumpowertransistors

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BC636

PNPTypePlasticEncapsulateTransistors

FEATURE PowerDissipation:PCM:0.83mW(Tamb=25°C)

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    ADG636YRU

  • 功能描述:

    IC SWITCH DUAL SPDT 14TSSOP

  • RoHS:

  • 類(lèi)別:

    集成電路(IC) >> 接口 - 模擬開(kāi)關(guān),多路復(fù)用器,多路分解器

  • 系列:

    -

  • 標(biāo)準(zhǔn)包裝:

    48

  • 功能:

    開(kāi)關(guān)

  • 電路:

    4 x SPST - NO

  • 導(dǎo)通狀態(tài)電阻:

    100 歐姆

  • 電壓電源:

    單/雙電源 電壓 -

  • 電源,單路/雙路(±):

    2 V ~ 12 V,±2 V ~ 6 V 電流 -

  • 電源:

    50nA

  • 工作溫度:

    -40°C ~ 85°C

  • 安裝類(lèi)型:

    表面貼裝

  • 封裝/外殼:

    16-SOIC(0.154,3.90mm 寬)

  • 供應(yīng)商設(shè)備封裝:

    16-SOIC

  • 包裝:

    管件

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
ADI(亞德諾)
23+
標(biāo)準(zhǔn)封裝
15663
我們只是原廠的搬運(yùn)工
詢(xún)價(jià)
AD
22+
TSSOP
10000
原裝正品現(xiàn)貨優(yōu)勢(shì)供應(yīng)
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ADI/亞德諾
23+
SOP
98900
原廠原裝正品現(xiàn)貨!!
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ADI/LINEAR
24+
SSOP14
58209
免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
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AD
2016+
TSSOP
3652
只做進(jìn)口原裝現(xiàn)貨!假一賠十!
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AnalogDevices
14SSOP
1200
AD代理旗下一級(jí)分銷(xiāo)商,主營(yíng)AD全系列產(chǎn)品
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AD
23+
TSSOP
5000
原裝正品,假一罰十
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ADI
2339+
NA
6423
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫(kù)存!
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AD
2016+
TSSOP14
3500
只做原裝,假一罰十,公司可開(kāi)17%增值稅發(fā)票!
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AD
TSSOP14
37526
只做原裝貨值得信賴(lài)
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更多ADG636YRU供應(yīng)商 更新時(shí)間2024-11-18 10:20:00