ADL8106CHIPS-SX中文資料亞德諾數(shù)據(jù)手冊PDF規(guī)格書

GENERAL DESCRIPTION

The ADL8106 is a gallium arsenide (GaAs), pseudomorphic high

electron mobility transfer (pHEMT), monolithic microwave integrated

circuit (MMIC), wideband low noise amplifier that operates from

20 GHz to 54 GHz. The ADL8106 provides a gain of 21.5 dB, an

output power for 1 dB compression (OP1dB) of 14 dBm, and a

typical output third-order intercept (OIP3) of 21.5 dBm at 30 GHz to

44 GHz. The ADL8106 requires 120 mA from a 3 V supply voltage

(VDD) and features inputs and outputs that are internally matched to

50 Ω, facilitating integration into multichip modules (MCMs). All data

is taken with the RFIN and RFOUT pads connected via one 0.076

mm (3 mil) wide gold ribbon bond of 0.076 mm to 0.152 mm (3 mil

to 6 mil) minimal length.

FEATURES

? Gain: 21.5 dB typical at 30 GHz to 44 GHz

? Input return loss: 22 dB typical at 30 GHz to 44 GHz

? Output return loss: 23 dB typical at 30 GHz to 44 GHz

? OP1dB: 14 dB typical at 30 GHz to 44 GHz

? PSAT: 18 dBm typical at 30 GHz to 44 GHz

? OIP3: 21.5 dBm typical at 30 GHz to 44 GHz

? Noise figure: 3.0 dB typical at 30 GHz to 44 GHz

? 3 V supply voltage at 120 mA

? 50 Ω matched input and output

? Die size: 2.3 mm x 1.45 mm x 0.1 mm

APPLICATIONS

? Test instrumentation

? Military and space

? Satellite