ADL8121ACPZN-R7RF/IF射頻/中頻RFID的射頻放大器規(guī)格書PDF中文資料

ADL8121ACPZN-R7屬于RF/IF射頻/中頻RFID的射頻放大器。由亞德諾半導體技術(shù)有限公司制造生產(chǎn)的ADL8121ACPZN-R7射頻放大器在射頻應用中，射頻放大器產(chǎn)品可用于信號增益和緩沖。這些產(chǎn)品與通用運算放大器的不同之處在于，它們通常適用于更高的頻率，更傾向于提供不可調(diào)節(jié)的固定增益，并且輸入或輸出阻抗值符合常用傳輸線特性阻抗。

GENERAL DESCRIPTION

The ADL8121 is a gallium arsenide (GaAs), monolithic microwave

integrated circuit (MMIC), pseudomorphic high electron mobility

transistor (pHEMT), low noise wideband amplifier that operates

from 0.025 GHz to 12 GHz.

The ADL8121 provides a typical gain of 16.5 dB, a 2.5 dB typical

noise figure, and a typical output third-order intercept (OIP3) of

36 dBm across the 0.025 GHz to 10 GHz frequency range, requiring

only 95 mA from a 5 V supply voltage. The saturated output

power (PSAT) of 21.5 dBm typical across the 0.025 GHz to

10 GHz frequency range enables the low noise amplifier (LNA)

to function as a local oscillator (LO) driver for many of Analog

Devices, Inc., balanced, in-phase and quadrature (I/Q) or image

rejection mixers.

The ADL8121 also features inputs and outputs that are internally

matched to 50 Ω, making the device ideal for surface-mounted

technology (SMT)-based and is housed in a RoHS-compliant, 2 mm

× 2 mm, 6-lead LFCSP.

FEATURES

? Low noise figure: 2.5 dB typical at 0.025 GHz to 10 GHz

? Single positive supply (self biased)

? High gain: 16.5 dB typical at 0.025 GHz to 10 GHz

? High OIP3: 36 dBm typical at 0.025 GHz to 10 GHz

? RoHS-compliant, 2 mm × 2 mm, 6-lead LFCSP

APPLICATIONS

? Test instrumentation

? Military communications

? Military radar

? Telecommunications