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ADL8142-2中文資料亞德諾數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

ADL8142-2
廠(chǎng)商型號(hào)

ADL8142-2

功能描述

GaAs, pHEMT, MMIC, Low Noise Amplifier, 23 GHz to 31 GHz

文件大小

212.12 Kbytes

頁(yè)面數(shù)量

8 頁(yè)

生產(chǎn)廠(chǎng)商 Analog Devices
企業(yè)簡(jiǎn)稱(chēng)

AD亞德諾

中文名稱(chēng)

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數(shù)據(jù)手冊(cè)

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更新時(shí)間

2025-1-7 22:23:00

ADL8142-2規(guī)格書(shū)詳情

GENERAL DESCRIPTION

The ADL8142-2C-CSL is a gallium arsenide (GaAs), monolithic

microwave integrated circuit (MMIC), pseudomorphic high electron

mobility transistor (pHEMT), low noise wideband amplifier that

operates from 23 GHz to 31 GHz. The ADL8142-2C-CSL provides

a typical gain of 26.5 dB, a 1.8 dB typical noise figure, and a typical

output third-order intercept (OIP3) of 20 dBm at 27 GHz to 31 GHz,

requiring only 25 mA from a 2 V supply voltage. Note that the OIP3

can be improved with larger drain currents. The ADL8142-2C-CSL

also features inputs and outputs that are AC-coupled and internally

matched to 50 Ω, making it ideal for high capacity microwave radio

applications.

FEATURES

? Low noise figure: 1.8 dB typical at 27 GHz to 31 GHz

? Single positive supply (self biased)

? High gain: 26.5 dB typical at 27 GHz to 31 GHz

? High OIP3: 20 dBm typical at 27 GHz to 31 GHz

? Die size: 0.945 mm × 1.015 mm × 0.100 mm

COMMERCIAL SPACE FEATURES

? Wafer diffusion lot traceability

? Radiation benchmark

? Total ionizing dose (TID): 30 krads

? Single event latchup (SEL): ≥ 62.4 MeV-cm2/mg

APPLICATIONS

? Geosynchronous high throughput satellite (GEO HTS)

? Low Earth orbit (LEO) space payloads

? Satellite communication

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