ADRF5080BCCZN-R7中文資料亞德諾數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

GENERAL DESCRIPTION

The ADRF5080 is a reflective, SP8T switch manufactured in the

silicon process. The ADRF5080 operates from 100 MHz to 20 GHz

with an insertion loss of lower than 2.0 dB and an isolation higher

than 40 dB. The device has an RF input power handling capability

of 30 dBm continuous wave power for the insertion loss path.

The ADRF5080 operates with a dual-supply voltage, +3.3 V and

?3.3 V. The device can also operate with a single-supply voltage

(VDD) applied while the negative supply pin (VSS) is tied to ground.

The single-supply operation condition requires a lower operating

power while the excellent small signal performance is maintained

See Table 2 for details.

The ADRF5080 employs complementary metal-oxide semiconductor

(CMOS)-/low voltage transistor to transistor logic (LVTTL)-compatible

controls.

The ADRF5080 comes in a 36-terminal, 5.50 mm × 5.50 mm, RoHS

compliant, land grid array (LGA) package and can operate from ?40°C to +105°C.

FEATURES

? Ultrawideband frequency range: 100 MHz to 20 GHz

? Low insertion loss

? 1.3 dB up to 6 GHz

? 1.6 dB up to 12 GHz

? 2.0 dB up to 20 GHz

? High isolation

? 46 dB up to 6 GHz

? 45 dB up to 12 GHz

? 40 dB up to 20 GHz

? High input linearity

? P0.1dB: 33 dBm typical

? IP3: 55 dBm typical

? High RF power handling

? Insertion loss path: 33 dBm

? Hot switching: 30 dBm

? Fast switching on and off time: 55 ns

? 0.1 dB settling time (50 VCTRL to 0.1 dB final RFOUT): 100 ns

? Single-supply operation capability

? All off state control

? Logic select control

? No low frequency spurs

? 36-terminal, 5.50 mm x 5.50 mm LGA package

APPLICATIONS

? Test and instrumentation

? Military radios, radars, and electronic counter measures (ECMs)

? Microwave radios and very small aperture terminals (VSATs)