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AN837

HowtoConfigureaLow-PowerTimer/OscillatortoOperatefromHigherSupplyVoltages

SILABS

Silicon Laboratories

BB837

SiliconTuningDiode

SiliconTuningDiode ?ForSATtuners ?Highcapacitanceratio ?Lowseriesresistance ?Excellentuniformityandmatchingduetoin-linematchingassemblyprocedure ?Pb-free(RoHScompliant)package

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BB837

SiliconTuningDiode(Extentedfrequencyrangeupto2.8GHzspecialdesignforuseinTV-satindoorunits)

SiliconTuningDiode Preliminarydata ?Extentedfrequencyrangeupto2.8GHzspecialdesignforuseinTV-satindoorunits ?Highcapacitanceratio

SIEMENSSiemens Semiconductor Group

西門子德國(guó)西門子股份公司

BB837

SiliconTuningDiode

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BB837

SiliconTuningDiode

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BL-HG837A-AV-TRB

TopEmittingSMTLEDComponents

Features: 1.EmittedColor:Green 2.LensAppearance:WaterClear 3.Mono-colortype. 4.1.0x0.5x0.4mm(0402)standardpackage 5.SuitableforallSMTassemblymethods. 6.Compatiblewithinfraredandvaporphase reflowsolderprocess. 7.Compatiblewithautomaticplacement equipment. 8

AmericanBright

American Bright OPTOELECTRONICS CORP.

BL-HG837A-TRB

TopEmittingSMTLEDComponents

Features: 1.EmittedColor:Green 2.LensAppearance:WaterClear 3.Mono-colortype. 4.1.0x0.5x0.4mm(0402)standardpackage 5.SuitableforallSMTassemblymethods. 6.Compatiblewithinfraredandvaporphase reflowsolderprocess. 7.Compatiblewithautomaticplacement equipment. 8

AmericanBright

American Bright OPTOELECTRONICS CORP.

CH837SPT

NPNMuti-ChipGeneralPurposeAmplifier

CHENMKOchenmko

力勤股份有限公司

CH837UPNPT

PNP&NPNMuti-ChipGeneralPurposeTransistor

VOLTAGE50VoltsCURRENT150mAmperes FEATURE *Smallsurfacemountingtype.(SC-74/SOT-457 *Highcurrentgain. *Suitableforhighpackingdensity. *Lowcolloector-emittersaturation. *Highsaturationcurrentcapability. *TwointernalisolatedPNPandNPNtransistorsinonepackage. A

CHENMKOchenmko

力勤股份有限公司

KB837

PHOTOCOUPLER

Kingbright

Kingbright Company LLC

KB837-B

GENERALPURPOSEHIGHISOLATIONVOLTAGESINGLETRANSISTORTYPEPHOTOCOUPLERSERIES

DESCRIPTION 1.TheKB837-B(3-channel)isopticallycoupledisolatorscontainingaGaASlightemittingdiodeandanNPNsiliconphototransistor. 2.Theleadpitchis2.54mm. 3.Solidinsulationthicknessbetweenemittingdiodeandoutputphototransistor:>=0.6mm. FEATURES 1.Leadforming(gull

Kingbright

Kingbright Company LLC

KRC837E

EPITAXIALPLANARNPNTRANSISTOR(SWITCHING,INTERFACECIRCUITANDDRIVERCIRCUIT)

SWITCHINGAPPLICATION. INTERFACECIRCUITANDDRIVERCIRCUITAPPLICATION FEATURES WithBuilt-inBiasResistors. SimplifyCircuitDesign. ReduceaQuantityofPartsandManufacturingProcess.

KECKEC CORPORATION

KEC株式會(huì)社

KRC837U

EPITAXIALPLANARNPNTRANSISTOR(SWITCHING,INTERFACECIRCUITANDDRIVERCIRCUIT)

SWITCHINGAPPLICATION. INTERFACECIRCUITANDDRIVERCIRCUITAPPLICATION FEATURES ●WithBuilt-inBiasResistors. ●SimplifyCircuitDesign. ●ReduceaQuantityofPartsandManufacturingProcess.

KECKEC CORPORATION

KEC株式會(huì)社

LM837

LowNoiseQuadOperationalAmplifier

NSCNational Semiconductor (TI)

美國(guó)國(guó)家半導(dǎo)體美國(guó)國(guó)家半導(dǎo)體公司

LM837M

LowNoiseQuadOperationalAmplifier

NSCNational Semiconductor (TI)

美國(guó)國(guó)家半導(dǎo)體美國(guó)國(guó)家半導(dǎo)體公司

LM837M

LM837LowNoiseQuadOperationalAmplifier

TI1Texas Instruments

德州儀器

LM837M/NOPB

LM837LowNoiseQuadOperationalAmplifier

TI1Texas Instruments

德州儀器

LM837MX

LM837LowNoiseQuadOperationalAmplifier

TI1Texas Instruments

德州儀器

LM837MX/NOPB

LM837LowNoiseQuadOperationalAmplifier

TI1Texas Instruments

德州儀器

LM837N

LowNoiseQuadOperationalAmplifier

NSCNational Semiconductor (TI)

美國(guó)國(guó)家半導(dǎo)體美國(guó)國(guó)家半導(dǎo)體公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
DATEL
2138+
DIP
8960
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BURR-BROWN
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
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TI德州儀器
22+
24000
原裝正品現(xiàn)貨,實(shí)單可談,量大價(jià)優(yōu)
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TI/TEXAS
23+
原廠封裝
8931
詢價(jià)
TI
24+
4
詢價(jià)
TI
2018+
26976
代理原裝現(xiàn)貨/特價(jià)熱賣!
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TI
24+
DSP
4306
進(jìn)口原裝現(xiàn)貨
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TI
22+23+
23547
絕對(duì)原裝全新正品現(xiàn)貨/優(yōu)勢(shì)渠道商、原盤原包原盒
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22+
NA
3450
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TI
24+
開(kāi)發(fā)板
20000
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更多ADS-837MM供應(yīng)商 更新時(shí)間2025-1-17 10:54:00

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