首頁 >AFBR-1405MZ>規(guī)格書列表
| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
AFBR-1405MZ | Low-Cost, 820 nm Miniature Link Fiber Optic Components with ST, SMA, SC, and FC Ports Features ?RoHScompliant ?Low-costtransmittersandreceivers ?ChoiceofST,SMA,SC,orFCports ?820nmwavelengthtechnology ?Signalratesupto160MBaud ?Linkdistancesuptoseveralkilometers ?Compatiblewith50/125μm,62.5/125μm,100/140μm,and200μmPlastic-CladSilica( | BOARDCOMBroadcom Corporation. 博通公司博通半導體 | BOARDCOM | |
Low-Cost,820nmMiniatureLinkFiberOpticComponentswithST,SMA,SC,andFCPorts Features ?RoHScompliant ?Low-costtransmittersandreceivers ?ChoiceofST,SMA,SC,orFCports ?820nmwavelengthtechnology ?Signalratesupto160MBaud ?Linkdistancesuptoseveralkilometers ?Compatiblewith50/125μm,62.5/125μm,100/140μm,and200μmPlastic-CladSilica( | BOARDCOMBroadcom Corporation. 博通公司博通半導體 | BOARDCOM | ||
Low-Cost,820nmMiniatureLinkFiberOpticComponentswithST,SMA,SC,andFCPorts Features ?RoHScompliant ?Low-costtransmittersandreceivers ?ChoiceofST,SMA,SC,orFCports ?820nmwavelengthtechnology ?Signalratesupto160MBaud ?Linkdistancesuptoseveralkilometers ?Compatiblewith50/125μm,62.5/125μm,100/140μm,and200μmPlastic-CladSilica( | BOARDCOMBroadcom Corporation. 博通公司博通半導體 | BOARDCOM | ||
3.3V/5VECL2-InputDifferentialXOR/XNOR Description TheMC10/100EP08isadifferentialXOR/XNORgate.TheEP08isidealforapplicationsrequiringthefastestACperformanceavailable. The100Seriescontainstemperaturecompensation. Features ?250psTypicalPropagationDelay ?MaximumFrequency>3GHzTypical ?PECLModeOpera | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | ||
Lowon-resistance | etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商 | etc2 | ||
HEXFET?PowerMOSFET Description SpecificallydesignedforAutomotiveapplications,thisStripePlanardesignofHEXFET?PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETp | IRF International Rectifier | IRF | ||
HEXFET?PowerMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprov | IRF International Rectifier | IRF | ||
UltraLowOn-Resistance | etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商 | etc2 | ||
AUTOMOTIVEGRADE Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
HEXFET?PowerMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprov | IRF International Rectifier | IRF | ||
UltraLowOn-Resistance | etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商 | etc2 | ||
AUTOMOTIVEGRADE Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
HEXFET?PowerMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprov | IRF International Rectifier | IRF | ||
AUTOMOTIVEGRADE Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
HEXFET?PowerMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprov | IRF International Rectifier | IRF | ||
HEXFET?PowerMOSFET Description SpecificallydesignedforAutomotiveapplications,thisStripePlanardesignofHEXFET?PowerMOSFETs utilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefitcom binedwiththefastswitchingspeedandruggedizeddevicedesignthat | IRF International Rectifier | IRF | ||
Lowon-resistance | etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商 | etc2 | ||
HEXFET?PowerMOSFET | IRF International Rectifier | IRF | ||
LCDEMIFilterArraywithESDProtection | CALMIRCO California Micro Devices Corp | CALMIRCO | ||
LCDEMIFilterArraywithESDProtection | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI |
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
AVAGO |
24+ |
N/A |
90000 |
一級代理商進口原裝現(xiàn)貨、價格合理 |
詢價 | ||
AVAGO |
21+ |
DIP |
455 |
原裝現(xiàn)貨假一賠十 |
詢價 | ||
BROADCOM |
20+ |
光電元件 |
259 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
Avago(安華高) |
23+ |
NA |
20094 |
正納10年以上分銷經(jīng)驗原裝進口正品做服務做口碑有支持 |
詢價 | ||
Broadcom |
22+ |
NA |
418 |
加我QQ或微信咨詢更多詳細信息, |
詢價 | ||
AVAGO/安華高 |
22+ |
ZIP |
9000 |
原裝正品 |
詢價 | ||
AVAGO |
DIP |
68900 |
原包原標簽100%進口原裝常備現(xiàn)貨! |
詢價 | |||
Broadcom/Avago |
23+ |
21500 |
詢價 | ||||
Avago(安華高) |
2324+ |
插件 |
78920 |
二十余載金牌老企,研究所優(yōu)秀合供單位,您的原廠窗口 |
詢價 | ||
Broadcom/AVAGO(安華高) |
23+ |
插件 |
7350 |
現(xiàn)貨供應,當天可交貨!免費送樣,原廠技術支持!!! |
詢價 |
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