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AN3307

GuidelinesforobtainingIEC60335ClassBcertificationforanySTM32application

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

AUIRFS3307Z

AdvancedProcessTechnology

IRF

International Rectifier

AUIRFS3307Z

AdvancedProcessTechnology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

AUIRFS3307ZTRL

AdvancedProcessTechnology

IRF

International Rectifier

AUIRFS3307ZTRR

AdvancedProcessTechnology

IRF

International Rectifier

AUIRFSL3307Z

AdvancedProcessTechnology

IRF

International Rectifier

AUIRFSL3307Z

AdvancedProcessTechnology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

CEM3307

DualP-Channel30-V(D-S)MOSFET

FEATURES ?Halogen-free ?TrenchFET?PowerMOSFET ?100UISTested APPLICATIONS ?LoadSwitches

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

CEM3307

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-30V,-6.2A,RDS(ON)=33mΩ@VGS=-10V. RDS(ON)=52mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM3307

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-6.2A,RDS(ON)=33mW@VGS=-10V. RDS(ON)=52mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CPH3307

Ultrahigh-SpeedSwitchingApplications

Features ?LowON-resistance. ?Ultrahigh-speedswitching. ?2.5Vdrive.

SANYOSanyo Semicon Device

三洋三洋電機(jī)株式會社

CPT3307

ExternalDrivePiezoTransducer(AC)

CANOPUSCanopus Electronics (H.K.) Ltd.

堪霖電子堪霖電子（香港）有限公司

DTQ3307

P-Channel30V(D-S)MOSFET

FEATURES ?DT-TrenchPowerMOSFET ?LowOn-ResistanceforLowVoltageDrop ?100RgandUISTested APPLICATIONS ?Battery,LoadandAdaptorSwitches -NotebookComputers -NotebookBatteryPacks

DINTEK

DinTek Semiconductor Co,.Ltd

FB3307Z

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FCS-3307

FixedDomeIPNetworkCamera

LVL1

Level One

FJB3307D

HighVoltageFastSwitchingNPNPowerTransistor

Features ?Built-inDiodebetweenCollectorandEmitter ?SuitableforElectronicBallastandSwitchModePowerSupplies

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FJB3307D

High-VoltageFast-SwitchingNPNPowerTransistor

Features ?Built-inDiodebetweenCollectorandEmitter ?SuitableforElectronicBallastandSwitch-ModePowerSupplies

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

FJB3307D

iscSiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterSustainingVoltage- :VCEO=400V(Min.) ·HighReliability ·LowCollectorSaturationVoltage ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Highruggednesselectronicignitions ·Highvoltageignitioncoildriv

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FJB3307DTM

High-VoltageFast-SwitchingNPNPowerTransistor

Features ?Built-inDiodebetweenCollectorandEmitter ?SuitableforElectronicBallastandSwitch-ModePowerSupplies

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

FJN3307R

NPNEpitaxialSiliconTransistor

SwitchingApplication(BiasResistorBuiltIn) ?Switchingcircuit,Inverter,Interfacecircuit,DriverCircuit ?BuiltinbiasResistor(R1=22K?,R2=47K?) ?ComplementtoFJN4307R

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號：

    AGB3307R

  • 制造商：

    Rochester Electronics LLC

  • 制造商：

    ANADIGICS Inc

供應(yīng)商型號品牌批號封裝庫存備注價格
AGB3307R
74
74
詢價
ANADIGICS
22+
SOT-89
20000
保證原裝正品,假一陪十
 詢價
ANADIGIC
21+
SOT89
550
原裝現(xiàn)貨假一賠十
 詢價
ADI
23+
20000
全新、原裝、現(xiàn)貨
 詢價
ANADIGICS
22+
SOT-89
100000
代理渠道/只做原裝/可含稅
 詢價
ANADIGICS
23+
SOT-89
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價
ANADIGICS
23+
SOT-89
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價
ANADIGICS
24+
SOT-89
6980
原裝現(xiàn)貨,可開13%稅票
 詢價
ANADIGICS
24+
SOT-89
5000
只做原裝公司現(xiàn)貨
 詢價
ANADIGICS
23+
原廠原包
19960
只做進(jìn)口原裝 終端工廠免費送樣
 詢價
更多AGB3307R供應(yīng)商 更新時間2025-1-16 16:20:00

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