AGB3312S24Q1中文資料ANADIGICS數(shù)據(jù)手冊PDF規(guī)格書

PRODUCT DESCRIPTION

The AGB3312 is one of a series of high performance InGaP HBT amplifiers designed for use in applications requiring high linearity, low noise, and low distortion. Active bias circuits on-chip eliminate the need for external resistive feedback, and no external matching components are needed for insertion into a 50? system. With a high output IP3, low noise figure, and wide band operation, the AGB3312 is ideal for wireless infrastructure applications such as Cellular Base Stations, MMDS, and WLL. Offered in a low cost SOT-89 surface mount package, the AGB3312 requires a single +5 V supply, and typically consumes 0.4 Watts of power.

FEATURES

? On-chip Active Bias

? DC-7000 MHz Operation Bandwidth

? +42 dBm Output IP3 at 850 MHz

? 5 dB Noise Figure at 850 MHz

? 11 dB Gain

? +17 dBm P1dB

? SOT-89 Package

? Single +5 V Supply

? Case Temperature: -40 to +85 °C

APPLICATIONS

? Cellular Base Stations for W-CDMA, CDMA, TDMA, GSM, PCS and CDPD systems

? Fixed Wireless

? MMDS/WLL

? WLAN