AGR19125EF中文資料TriQuint數(shù)據(jù)手冊PDF規(guī)格書

Introduction

The AGR19125E is a 125 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—1990 MHz), time-division multiple access (TDMA), and single-carrier or multicarrier class AB power amplifier applications.

Features

Typical 2 carrier, N-CDMA performance for

VDD = 28 V, IDQ = 1250 mA, F1 = 1958.75 MHz,

F2 = 1961.25 MHz, IS-95 (pilot, paging, sync,

traffic channels 8—13) 1.2288 MHz channel

bandwidth (BW). Adjacent channels measured

over a 30 kHz BW at F1 – 0.885 MHz and

F2 + 0.885 MHz. Intermodulation distortion

products measured over a 1.2288 MHz BW at

F1 – 2.5 MHz and F2 + 2.5 MHz. Peak/Average

(P/A) = 9.72 dB at 0.01 probability on CCDF:

— Output power: 24 W.

— Power gain: 15 dB.

— Efficiency: 24.

— ACPR: –48 dBc.

— IMD3: –34 dBc.

— Return loss: –10 dB.

High-reliability, gold-metalization process.

Low hot carrier injection (HCI) induced bias drift

over 20 years.

Internally matched.

High gain, efficiency, and linearity.

Integrated ESD protection.

Device can withstand a 10:1 voltage standing wave

ratio (VSWR) at 28 Vdc, 1960 MHz, 125 W continuous wave (CW) output power.

Large signal impedance parameters available.