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AH8113TE3R中文資料創(chuàng)瑞科技數(shù)據(jù)手冊PDF規(guī)格書

AH8113TE3R
廠商型號

AH8113TE3R

功能描述

HALL SWITH LOW POWER, HIGH SENSITIVITY, CMOS HALL SWITCH

文件大小

465.58 Kbytes

頁面數(shù)量

9

生產(chǎn)廠商 AiT Semiconductor Inc.
企業(yè)簡稱

AITSEMI創(chuàng)瑞科技

中文名稱

AiT創(chuàng)瑞科技官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-3-30 23:00:00

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AH8113TE3R規(guī)格書詳情

DESCRIPTION

The AH8113 is an integrated hall-effect sensor designed specifically to meet the requirements of low-power devices. e.g. as an On/Off switch in Cellular Flip-Phones, with battery operating voltages of 1.65V-5.5V.

Precise magnetic switching points and high temperature stability are achieved through the unique design of the internal circuit. An onboard clock scheme is used to reduce the average operating current of the IC. During the operate phase the IC compares the actual magnetic field detected with the internally compensated switching points. The output Voltage is switched at the end of each operating phase. During the Stand-by phase the output stage is latched and the current consumption of the device reduced to some μA.

The IC switching behavior is Omnipolar; it can be switched on with either the North or South pole of a magnet.

The

AH8113 is available in T SOT 23 and TO 92S

p acka ge s

FEATURES

? Micro power design

? 1.65 V to 5.5 V battery operation

? High sensitivity and high stability of the

magnetic switching points

? High resistance to mechanical stress

? Digital output signal

? Switching for both poles of a magnet

(omnipolar)

? Not suitable for automotive application

? Available in T SOT 2 3 and TO 92S p ackages

APPLICATION

? Cover switch in clam-shell cellular phones

? Cover switch in Notebook PC/PDA

? Contact-less switch in consumer products

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