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AORN1003ATF

Molded,50milPitch,Dual-In-LineThinFilmResistor,PrecisionAutomotive,AEC-Q200Qualified,Networks

FEATURES ?Moistureresistanttantalumnitrideresistivefilm (MILSTD202,method106) ?Standard8pincount(0.150narrowbody) JEDEC?MS-012 ?Ruggedmoldedcaseconstruction ?Excellentlongtermratiostability (ΔR±0.015) ?LowTCRtracking±5ppm/°C ?Passessulfurresistancet

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

AORN1003ATS

Molded,50milPitch,Dual-In-LineThinFilmResistor,PrecisionAutomotive,AEC-Q200Qualified,Networks

FEATURES ?Moistureresistanttantalumnitrideresistivefilm (MILSTD202,method106) ?Standard8pincount(0.150narrowbody) JEDEC?MS-012 ?Ruggedmoldedcaseconstruction ?Excellentlongtermratiostability (ΔR±0.015) ?LowTCRtracking±5ppm/°C ?Passessulfurresistancet

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

AORN1003AUF

Molded,50milPitch,Dual-In-LineThinFilmResistor,PrecisionAutomotive,AEC-Q200Qualified,Networks

FEATURES ?Moistureresistanttantalumnitrideresistivefilm (MILSTD202,method106) ?Standard8pincount(0.150narrowbody) JEDEC?MS-012 ?Ruggedmoldedcaseconstruction ?Excellentlongtermratiostability (ΔR±0.015) ?LowTCRtracking±5ppm/°C ?Passessulfurresistancet

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

AORN1003BTF

Molded,50milPitch,Dual-In-LineThinFilmResistor,PrecisionAutomotive,AEC-Q200Qualified,Networks

FEATURES ?Moistureresistanttantalumnitrideresistivefilm (MILSTD202,method106) ?Standard8pincount(0.150narrowbody) JEDEC?MS-012 ?Ruggedmoldedcaseconstruction ?Excellentlongtermratiostability (ΔR±0.015) ?LowTCRtracking±5ppm/°C ?Passessulfurresistancet

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

AORN1003BTS

Molded,50milPitch,Dual-In-LineThinFilmResistor,PrecisionAutomotive,AEC-Q200Qualified,Networks

FEATURES ?Moistureresistanttantalumnitrideresistivefilm (MILSTD202,method106) ?Standard8pincount(0.150narrowbody) JEDEC?MS-012 ?Ruggedmoldedcaseconstruction ?Excellentlongtermratiostability (ΔR±0.015) ?LowTCRtracking±5ppm/°C ?Passessulfurresistancet

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

AORN1003BUF

Molded,50milPitch,Dual-In-LineThinFilmResistor,PrecisionAutomotive,AEC-Q200Qualified,Networks

FEATURES ?Moistureresistanttantalumnitrideresistivefilm (MILSTD202,method106) ?Standard8pincount(0.150narrowbody) JEDEC?MS-012 ?Ruggedmoldedcaseconstruction ?Excellentlongtermratiostability (ΔR±0.015) ?LowTCRtracking±5ppm/°C ?Passessulfurresistancet

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

AORN1003CTF

Molded,50milPitch,Dual-In-LineThinFilmResistor,PrecisionAutomotive,AEC-Q200Qualified,Networks

FEATURES ?Moistureresistanttantalumnitrideresistivefilm (MILSTD202,method106) ?Standard8pincount(0.150narrowbody) JEDEC?MS-012 ?Ruggedmoldedcaseconstruction ?Excellentlongtermratiostability (ΔR±0.015) ?LowTCRtracking±5ppm/°C ?Passessulfurresistancet

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

AORN1003CTS

Molded,50milPitch,Dual-In-LineThinFilmResistor,PrecisionAutomotive,AEC-Q200Qualified,Networks

FEATURES ?Moistureresistanttantalumnitrideresistivefilm (MILSTD202,method106) ?Standard8pincount(0.150narrowbody) JEDEC?MS-012 ?Ruggedmoldedcaseconstruction ?Excellentlongtermratiostability (ΔR±0.015) ?LowTCRtracking±5ppm/°C ?Passessulfurresistancet

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

AORN1003CUF

Molded,50milPitch,Dual-In-LineThinFilmResistor,PrecisionAutomotive,AEC-Q200Qualified,Networks

FEATURES ?Moistureresistanttantalumnitrideresistivefilm (MILSTD202,method106) ?Standard8pincount(0.150narrowbody) JEDEC?MS-012 ?Ruggedmoldedcaseconstruction ?Excellentlongtermratiostability (ΔR±0.015) ?LowTCRtracking±5ppm/°C ?Passessulfurresistancet

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

APT1003RBFLL

POWERMOS7FREDFET

ADPOW

Advanced Power Technology

APT1003RBFLL

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=4A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

APT1003RBLL

POWERMOS7MOSFET

ADPOW

Advanced Power Technology

APT1003RBLL

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=4A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

APT1003RKFLL

POWERMOS7FREDFET

ADPOW

Advanced Power Technology

APT1003RKLL

POWERMOS7MOSFET

ADPOW

Advanced Power Technology

APT1003RKLL

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=4A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

APT1003RKLL

PowerMOS7isanewgenerationoflowloss,highvoltage,N-Channel

MicrosemiMicrosemi Corporation

美高森美美高森美公司

APT1003RKLLG

PowerMOS7isanewgenerationoflowloss,highvoltage,N-Channel

MicrosemiMicrosemi Corporation

美高森美美高森美公司

APT1003RSFLL

POWERMOS7FREDFET

ADPOW

Advanced Power Technology

APT1003RSLL

POWERMOS7MOSFET

ADPOW

Advanced Power Technology

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