AIMBG120R010M1中文資料英飛凌數(shù)據(jù)手冊PDF規(guī)格書

Features

? VDSS = 1200 V at Tvj = -55...175 °C

? IDDC = 205A at TC = 25°C

? RDS(on) = 8.7 mΩ at VGS = 20 V, Tvj = 25°C

? New performance-optimized chip technology (Gen1p) with improved RDSon* A FOM

? Best in class switching energy for lower switching losses and reduced cooling efforts

? Lowest device capacitances for higher switching speeds and higher power density

? A combination of low Crss/Ciss ratio and high VGS(th) to avoid parasitic turn-on and enable unipolar

gate driving

? Reduced total gate charge QGtot for lower driving power and losses

? Increased recommended turn-on voltage (VGS(on) = 20 V) for lower RDS(on)

? .XT die attach technology for best in class thermal performance

? Low package stray inductance for faster and cleaner switching

? Sense (Kelvin) source pin for better gate control and reduced switching losses

? Minimal creepage distance 5.85 mm (material group II) to fit 800 V applications without coating

? SMT package for automated assembly and reduced system costs

Potential applications

? On-board charger

? DC/DC converter

? Auxiliary drives

Product validation

? Qualified for Automotive Applications. Product Validation according to AEC-Q100/101

Description

Pin definition:

? Pin 1 - Gate

? Pin 2 - Kelvin sense contact

? Pin 3…7 - Source

? Tab - Drain

Note: The source and sense pins are not exchangeable, their exchange might lead to malfunction