AIMZH120R020M1T中文資料英飛凌數(shù)據(jù)手冊PDF規(guī)格書

廠商型號	AIMZH120R020M1T
功能描述	CoolSiC? 1200 V SiC Trench MOSFET
絲印標識	A12M1T020
封裝外殼	PG-TO247-4-STD-NT6.7
文件大小	1.79636 Mbytes
頁面數(shù)量	15 頁
生產廠商	Infineon Technologies AG
企業(yè)簡稱	Infineon【英飛凌】
中文名稱	英飛凌科技股份公司官網(wǎng)
原廠標識
數(shù)據(jù)手冊	下載地址一下載地址二到原廠下載
更新時間	2025-3-12 18:39:00
人工找貨	AIMZH120R020M1T價格和庫存，歡迎聯(lián)系客服免費人工找貨

Features

? VDSS = 1200 V at Tvj = -55...175°C

? IDDC = 100 A at TC = 25°C

? RDS(on) = 19 mΩ at VGS = 20 V, Tvj = 25°C

? New performance-optimized chip technology (Gen1p) with improved RDSon* A FOM

? Increased recommended turn-on voltage (VGS(on) = 20 V) for lower RDS(on)

? Best in class switching energy for lower switching losses and reduced cooling efforts

? Lowest device capacitances for higher switching speeds and higher power density

? A combination of low Crss/Ciss ratio and high VGS(th) to avoid parasitic turn-on and enable unipolar

gate driving

? Reduced total gate charge QGtot for lower driving power and losses

? .XT die attach technology for best in class thermal performance

? Sense pin for optimized switching performance

? Suitable for HV creepage requirements