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AN578

POWERCROSSINGBEHAVIOUROFLINECARDPROTECTION

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

AWB578

30~1200MHzWide-bandMediumPowerAmplifierMMIC

ASB

Advanced Semiconductor Business Inc.

AWB578

30~1200MHzWide-bandMediumPowerAmplifierMMIC

ASB

Advanced Semiconductor Business Inc.

BLF578

PowerLDMOStransistor

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BLF578

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BLF578

PowerLDMOStransistor

Generaldescription A1200WLDMOSpowertransistorforbroadcastapplicationsandindustrialapplications intheHFto500MHzband. Featuresandbenefits ?Typicalpulsedperformanceatfrequencyof225MHz,asupplyvoltageof50Vandan IDqof40mA,atpof100?swith?of20: ?Outp

AmpleonAmpleon USA Inc.

安譜隆

BLF578XR

PowerLDMOStransistor

Generaldescription A1400WextremelyruggedLDMOSpowertransistorforbroadcastandindustrial applicationsintheHFto500MHzband.Thisproductisanenhancedversionofthe BLF578usingAmpleon'sXRprocesstoprovidemaximumruggednesscapabilityinthe mostsevereapplicationswithou

AmpleonAmpleon USA Inc.

安譜隆

BLF578XR

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BLF578XR(S)

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BLF578XRS

PowerLDMOStransistor

Generaldescription A1400WextremelyruggedLDMOSpowertransistorforbroadcastandindustrial applicationsintheHFto500MHzband.Thisproductisanenhancedversionofthe BLF578usingAmpleon'sXRprocesstoprovidemaximumruggednesscapabilityinthe mostsevereapplicationswithou

AmpleonAmpleon USA Inc.

安譜隆

BLF578XRS

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BY578

Damperdiodes

DESCRIPTION Ruggedglasspackage,usingahightemperaturealloyedconstruction. Thispackageishermeticallysealedandfatiguefreeascoefficientsofexpansionofallusedpartsarematched. FEATURES ?Glasspassivated ?Highmaximumoperatingtemperature ?Lowleakagecurrent ?Excellen

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

C578

250WATTS(AC)DC/DCSINGLEOUTPUT

250WATTS(AC)DC/DCSINGLEOUTPUT Features ?SingleOutput ?3Ux21(24)TEx166.5mm(24TEfor5Voutputs) ?Weight1.7kg

POWERBOX

Powerbox manufactures

CH578

ARMkernel

WCHNanjing Qinheng Microelectronics Co., Ltd.

南京沁恒江蘇沁恒股份有限公司

CH578M

ARMkernel

WCHNanjing Qinheng Microelectronics Co., Ltd.

南京沁恒江蘇沁恒股份有限公司

ECG578

DiodesandRectifiers(GeneralPurpose)

ETCList of Unclassifed Manufacturers

未分類制造商

HMC578

GaAsMMICx2ACTIVEFREQUENCYMULTIPLIER,24-33GHzOUTPUT

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

HMC578

GaAsMMICx2ACTIVEFREQUENCYMULTIPLIER,24-33GHzOUTPUT

Hittite

Hittite Microwave Corporation

HMC578

TestInstrumentation

GeneralDescription TheHMC578dieisax2activebroadbandfrequencymultiplierutilizingGaAsPHEMTtechnology.Whendrivenbya+3dBmsignal,themultiplierprovides+17dBmtypicaloutputpowerfrom24to33GHz.TheFoand3Foisolationsare>25dBcand>36dBcrespectivelyat28GHz.TheH

MICROSS

Micross Components

HMC578

GaAsMMICx2ACTIVEFREQUENCYMULTIPLIER,24-33GHzOUTPUT

GeneralDescription TheHMC578dieisax2activebroadbandfrequencymultiplierutilizingGaAsPHEMTtechnology.Whendrivenbya+3dBmsignal,themultiplierprovides+17dBmtypicaloutputpowerfrom24to33GHz.TheFoand3Foisolationsare>25dBcand>36dBcrespectivelyat28GHz.TheH

Hittite

Hittite Microwave Corporation

供應(yīng)商型號品牌批號封裝庫存備注價格
XEDSEMI
23+
SOT23-6
96000
原廠授權(quán)代理,海外優(yōu)勢訂貨渠道?？商峁┐罅繋齑?詳
 詢價
DIODES
22+
NA
12080
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價
DIODES INCORPORATED
23+
NA
14855
LED驅(qū)動器
 詢價
Diodes
22+
SOT26
9000
原廠渠道,現(xiàn)貨配單
 詢價
Diodes
21+
SOT26
13880
公司只售原裝,支持實單
 詢價
Diodes
23+
SOT26
9000
原裝正品，支持實單
 詢價
DIODES
23+
20000
全新、原裝、現(xiàn)貨
 詢價
DiodesIncorporated
24+
SOT-26
90000
原廠正規(guī)渠道、保證進(jìn)口原裝現(xiàn)貨假一罰十價格合理
 詢價
Diodes現(xiàn)貨
2022+
SOT-23-6
350000
專注工業(yè)、軍工級別芯片,十五年優(yōu)質(zhì)供應(yīng)商
 詢價
DiodesIncorporated
19+
58000
原裝正品價格優(yōu)勢
 詢價
更多AL578供應(yīng)商 更新時間2024-11-15 15:47:00

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