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BLK-E653

DCBlock1.85mm-Fto1.85mm-M

MINI

Mini-Circuits

BLK-E653+

DCBlock1.85mm-Fto1.85mm-M

MINI

Mini-Circuits

BUF653

SiliconNPNHighVoltageSwitchingTransistor

Features ●Simple-sWitch-OffTransistor(SWOT) ●HIGHSPEEDtechnology ●Planarpassivation ●100kHzswitchingrate ●Verylowswitchinglosses ●Verylowdynamicsaturation ●Verylowoperatingtemperature ●OptimizedRBSOA ●Highreversevoltage Applications Electroniclampballas

Temic

TEMIC Semiconductors

BUF653

SiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=400V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):0.3V(Max)@IC=1.8A APPLICATIONS ·Electroniclampballastcircuits ·Switch-modepowersupplies

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

C653

500WATTS(AC)DC/DCSINGLEOUTPUT

Features ?SingleOutput ?3Ux42TEx166.5mm ?Weight:3.5kg

POWERBOX

Powerbox manufactures

CM653

S-8DoubleContactBayonetBase

S-8DoubleContactBayonetBase S-8DoubleContactIndexBase S-11SingleContactBayonetBase

CML

Chicago Miniature Lamp,inc

CM653

ContactBayonetBase

S-8DoubleContactBayonetBase S-8DoubleContactIndexBase S-11SingleContactBayonetBase

VCC

Visual Communications Company

CN653

NPNSILICONPLANAREPITAXIALTRANSISTORS

CDIL

Continental Device India Limited

CNS653-ME

650WattAC-DCPowerSupplies

ARTESYN

Artesyn Embedded Technologies

CNS653-MU

TypeBFready

ARTESYN

Artesyn Embedded Technologies

CNS653-MU

650WattAC-DCPowerSupplies

ARTESYN

Artesyn Embedded Technologies

CP653

POWERFET??SILICONEPITAXIALJUNCTIONN-CHANNELFIELDEFFECTTRANSISTORS

TELEDYNE

Teledyne Technologies Incorporated

FDC653

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription ThisN-ChannelenhancementmodepowerfieldeffecttransistorsisproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessistailoredtominimizeon-stateresistance.Thesedevicesareparticularlysuitedforlowvoltageapplic

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDC653N

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription ThisN-ChannelenhancementmodepowerfieldeffecttransistorsisproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessistailoredtominimizeon-stateresistance.Thesedevicesareparticularlysuitedforlowvoltageapplic

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FXT653

NPNSILICONPLANARMEDIUMPOWERTRANSISTOR

FEATURES *100VoltVCEO *2Ampscontinuouscurrent *Lowsaturationvoltage *Ptot=1Watt

Zetex

Zetex Semiconductors

FZT653

NPNSILICONPLANARHIGHPERFORMANCETRANSISTOR

FEATURES *Lowsaturationvoltage

Zetex

Zetex Semiconductors

FZT653

SOT223NPNSILICONPLANARHIGHPERFORMANCETRANSISTOR

Features ?BVCEO>100V ?IC=3AHighContinuousCurrent ?ICM=6APeakPulseCurrent ?LowSaturationVoltageVCE(sat)

DIODES

Diodes Incorporated

FZT653

NPNSiliconPlanarHighPerformanceTransistor

Features ●Lowsaturationvoltage

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

FZT653

100VNPNHIGHPERFORMANCETRANSISTOR

DIODES

Diodes Incorporated

FZT653Q

100VNPNHIGHPERFORMANCETRANSISTOR

Features ?BVCEO>100V ?IC=2AHighContinuousCurrent ?ICM=6APeakPulseCurrent ?LowSaturationVoltageVCE(SAT)

DIODES

Diodes Incorporated

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24+
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8300
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167
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2016+
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6528
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2016+
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9000
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16+
MSOP8
2500
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23+
QFP48
5000
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REALTEK
09+
QFP-48
1750
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REALTEK
22+
QFP
8200
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24+
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2650
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QFP
8560
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更多ALC653供應(yīng)商 更新時(shí)間2025-1-5 14:00:00