ALD1101B中文資料ADL數(shù)據(jù)手冊PDF規(guī)格書

GENERAL DESCRIPTION

The ALD1101 is a monolithic dual N-channel matched transistor pair

intended for a broad range of analog applications. These enhancementmode

transistors are manufactured with Advanced Linear Devices'

enhanced ACMOS silicon gate CMOS process.

The ALD1101 offers high input impedance and negative current temperature

coefficient. The transistor pair is matched for minimum offset voltage

and differential thermal response, and it is designed for switching and

amplifying applications in +2V to +10V systems where low input bias

current, low input capacitance and fast switching speed are desired.

Since these are MOSFET devices, they feature very large (almost infinite)

current gain in a low frequency, or near DC, operating environment.

When used with an ALD1102, a dual CMOS analog switch can be

constructed. In addition, the ALD1101 is intended as a building block for

differential amplifier input stages, transmission gates, and multiplexer

applications.

The ALD1101 is suitable for use in precision applications which require

very high current gain, beta, such as current mirrors and current sources.

The high input impedance and the high DC current gain of the Field Effect

Transistors result in extremely low current loss through the control gate.

The DC current gain is limited by the gate input leakage current, which is

specified at 50pA at room temperature. For example, DC beta of the

device at a drain current of 5mA at 25°C is = 5mA/50pA = 100,000,000.

FEATURES

? Low threshold voltage of 0.7V

? Low input capacitance

? Low Vos grades -- 2mV, 5mV, 10mV

? High input impedance -- 1012Ω typical

? Negative current (IDS) temperature coefficient

? Enhancement-mode (normally off)

? DC current gain 109

? RoHS compliant

APPLICATIONS

? Precision current mirrors

? Precision current sources

? Analog switches

? Choppers

? Differential amplifier input stage

? Voltage comparator

? Data converters

? Sample and Hold

? Analog inverter