ALD1107SBL中文資料ADL數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

GENERAL DESCRIPTION

The ALD1107/ALD1117 are monolithic quad/dual P-channel enhancement

mode matched MOSFET transistor arrays intended for a broad

range of precision analog applications. The ALD1107/ALD1117 offer

high input impedance and negative current temperature coefficient. The

transistor pairs are matched for minimum offset voltage and differential

thermal response, and they are designed for precision analog switching

and amplifying applications in -2V to -10V systems where low input bias

current, low input capacitance and fast switching speed are desired.

These MOSFET devices feature very large (almost infinite) current gain

in a low frequency, or near DC, operating environment. The ALD1107/

ALD1117 are building blocks for differential amplifier input stages,

transmission gates, multiplexer applications, current sources and many

precision analog circuits.

FEATURES

? Low threshold voltage of -0.7V

? Low input capacitance

? Low Vos -- 2mV typical

? High input impedance -- 1014Ω typical

? Negative current (IDS) temperature coefficient

? Enhancement-mode (normally off)

? DC current gain 109

? Low input and output leakage currents

? RoHS compliant

APPLICATIONS

? Precision current mirrors

? Precision current sources

? Voltage choppers

? Differential amplifier input stage

? Voltage comparator

? Data converters

? Sample and Hold

? Analog signal processing