ALD110904SA中文資料ALD數(shù)據(jù)手冊PDF規(guī)格書

GENERAL DESCRIPTION

ALD110804/ALD110904 are high precision monolithic quad/dual enhancement mode N-Channel MOSFETS matched at the factory using ALD’s proven EPAD? CMOS technology. These devices are intended for low voltage, small signal applications.

FEATURES

? Enhancement-mode (normally off)

? Precision Gate Threshold Voltage of +0.40V

? Matched MOSFET to MOSFET characteristics

? Tight lot to lot parametric control

? Low input capacitance

? VGS(th) match (VOS) to 10mV

? High input impedance — 1012? typical

? Positive, zero, and negative VGS(th) temperature coefficient

? DC current gain >108

? Low input and output leakage currents

APPLICATIONS

? Ultra low power (nanowatt) analog and digital circuits

? Ultra low operating voltage(<0.40V) circuits

? Sub-threshold biased and operated circuits

? Precision current mirrors and current sources

? Nano-Amp current sources

? High impedance resistor simulators

? Capacitive probes and sensor interfaces

? Differential amplifier input stages

? Discrete Voltage comparators and level shifters

? Voltage bias circuits

? Sample and Hold circuits

? Analog and digital inverters

? Charge detectors and charge integrators

? Source followers and High Impedance buffers

? Current multipliers

? Discrete Analog switches / multiplexers